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KTC3200

Description
Rated power: 625mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 120V Transistor type: NPN NPN
CategoryDiscrete semiconductor    triode   
File Size1019KB,6 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
Download Datasheet Parametric View All

KTC3200 Overview

Rated power: 625mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 120V Transistor type: NPN NPN

KTC3200 Parametric

Parameter NameAttribute value
rated power625mW
Collector current Ic100mA
Collector-emitter breakdown voltage Vce120V
Transistor typeNPN

KTC3200 Preview

Download Datasheet
KTC3200
Rev.E Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
特征
/ Features
½噪声,高 h
FE
,高击穿电压。
Low noise, high h
FE
, high breakdown voltage.
用途
/
Applications
用于½噪声放大。
Low noise audio amplifier application.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
Y
120~240
GR
200~400
BL
350~700
http://www.fsbrec.com
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6
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