KSC2690A datasheet, PDF - EEWORLD Datasheet

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KSC2690A: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size2MB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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KSC2690A Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: KSC2690A

Product parameters:

Pcm (maximum power dissipation): 1250mW

Ic (collector current): 1200mA

BVcbo (Collector-Base Breakdown Voltage): 160V

BVceo (Collector-Emitter Breakdown Voltage): 160V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 60, Max: 320

VCE (sat) saturation voltage drop: 0.7V

fT (transition frequency): 155+MHz

Package: TO-126

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

KSC2690/2690A

TRANSISTOR (NPN)

TO-126

FEATURES

Audio Frequency Power Amplifier

High Frequency Power Amplifier

Complement to KSA1220/KSA1220A

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current ( PW

≤10ms,Duty

Cycle

≤2

% )

Base Current

Collector Power Dissipation (T

= 25

℃)

Collector Power Dissipation (T

= 25

℃)

stg

Junction Temperature

Storage Temperature

Parameter

KSA2690

KSA2690A

CEO

KSA2690

KSA2690A

EBO

Value

120

160

120

160

1.2

2.5

0.3

1.25

150

-55-150

Unit

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

(1)

Symbol

CBO

EBO

FE(1)

FE(2)

CE(sat)

BE(sat)

Test

conditions

Min

Typ

Max

Unit

μA

=120V, I

=3 V, I

=5V, I

=5mA

=5V, I

=300mA

=1 A, I

=200mA

(1)

=1 A, I

=200mA

(1)

=5V, I

=200mA

=10V, I

=0, f=1MHz

105

140

0.4

155

320

0.7

1.3

MHz

Pulse Test : PW

≤350

us , Duty Cycle

≤

2 %

FE(2)

60-120

CLASSIFICATION OF

Rank

Range

100-200

160-320

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