KIA
SEMICONDUCTORS
8A，500V
N-CHANNEL MOSFET
840S
4.
Absolute maximum ratings
(T
C
=25°C,unless otherwise specified)
Units
Rating
Parameter
Drain-source voltage
Continuous drain current
Continuous drain current T
C
=100
ºC
Pulsed drain current
Power dissipation
Derating factor above 25℃
Gate-source voltage
Single pulse avalanche energy
Avalanche energy, repetitive
Avalanche current
Peak diode recovery dv/dt
Gate-source ESD(HBM-C=100pF,R=1.5KΩ)
Operating junction and storage temperature
range
Maximum temperature for soldering
Symbol
V
DSS
I
D
I
DMa1
P
D
V
GS
E
ASa2
E
ARa1
I
AR a1
dv/dt
a3
VESD
(G-S)
T
J
,T
STG
T
L
TO-220
TO-252,
TO-263
500
8.0
5.5
28
160
100
1.28
0.8
+20
400
30
7.0
5.5
4000
150,-55 to150
300
V
A
A
A
W
W/
ºC
V
mJ
mJ
A
V/ns
V
ºC
ºC
*Drain current limited by maximum junction temperature
Caution：Stresses greater than those listed in the”Absolute maximum ratings”table may cause permanent
Damage to the device
5.
Thermal characteristics
Parameter
Junction-case
Junction-ambient
Symbol
R
θJC
R
θJA
Rating
1.04
100
Unit
ºC/W
ºC/W
Test condition
Drain lead soldered to water cooled heatsink,P
D
adjusted for a peak junction temperature of +150
ºC
1 cubic foot chamber,free air
2 of 6
Rev 1.2 JAN 2016
KIA
SEMICONDUCTORS
8A，500V
N-CHANNEL MOSFET
840S
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Bvdss temperature coefficient
Symbol
BV
DSS
△BV
DSS
/△T
J
(T
C
=25°C,unless otherwise specified)
Test Conditions
Min Typ Max Units
V
GS
=0V,I
D
=250μA
500
-
-
V
Reference 25℃
I
D
=250uA
V
DS
=500V, V
GS
=0V
T
A
=25°C
V
DS
=400V, V
GS
=0V
T
A
=125°C
I
GS
=+1mA
(open drain)
V
GS
=20V
V
GS
=-20V
V
GS
=10V,I
D
=4A
V
DS
= V
GS
, I
D
=250uA
V
DS
=15V, I
D
=3A
V
DS
=25V,V
GS
=0V
f=1MHz
-
-
-
+20
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.74
-
-
-
-
-
0.7
3
8.5
960
110
10
11
17
46
22
24
4.0
10
-
-
-
175
0.75
8.57
-
25
μA
250
-
10
-10
0.9
4
-
-
-
-
-
-
-
-
-
-
-
8
32
1.5
-
-
-
V
uA
Ω
V
S
pF
V/ºC
Drain-source leakage current
I
DSS
Gate source breakdown voltage
Gate-source forward leakage
Gate-source reverse leakage
Drain-source on-resistance
Gate threshold voltage
Pulse width tp<380μs,
δ<2%
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous source current（body biode）
Maximum pulsed current（body biode）
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Pulse width tp<380μs,
δ<2%
V
GSO
I
GSS(F)
I
GSS(R)
R
DS(on)
V
GS(TH)
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
V
DD
=250V, I
D
=8A,
R
G
=12Ω,V
GS
=10V
ns
V
DD
=250V, I
D
=8A,
V
GS
=10V
nC
A
V
ns
nC
A
I
S
=8A, V
GS
=0V
I
S
=8A, V
GS
=0V
dI
F
/dt=100A/μs
T
J
=25ºC
Note:a1.Repetitive rating;pulse width limited by maximum junction temperature
a2.L=10.0mH,Start T
J
=25ºC.
a3. I
SD
=8A di/dt<100A/μs,V
DD
< BV
DS,
Start T
J
=25ºC.
3 of 6
Rev 1.2 JAN 2016
MCU
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