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KIA740HP

Description
Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 10A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 500mΩ @ 5.2A, 10V Maximum power consumption Dispersed (Ta=25°C): 139W (Tc) Type: N-channel N-channel, 400V, 10A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size384KB,5 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KIA740HP Overview

Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 10A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 500mΩ @ 5.2A, 10V Maximum power consumption Dispersed (Ta=25°C): 139W (Tc) Type: N-channel N-channel, 400V, 10A

KIA740HP Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)400V
Continuous drain current (Id) at 25°C10A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance500mΩ @ 5.2A,10V
Maximum power dissipation (Ta=25°C)139W(Tc)
typeN channel

KIA740HP Preview

Download Datasheet
KIA
SEMICONDUCTORS
10Amps,400V
N-CHANNEL MOSFET
740H
1.Description
The KIA740H N-Channel enhancement mode silicon gate power MOSFET is designed for
high
voltage,high
speed
power
switching
applications
such
as
switching
regulators,switching
converters,solenoid,motor drivers,relay drivers.
2.
Features
n
n
n
n
n
n
R
DS(on)
= 0.45Ω @V
GS
= 10 V
Avalanche energy specified
Rugge-SOA is power dissipation limited
Fast switching capability
Linear transfer characteristics
High input impedance
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
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