KIA
SEMICONDUCTORS
130A，60V
N-CHANNEL MOSFET
3205S
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Junction and storage temperature range
Continuous drain current
Pulse drain current
Avalanche current
Maximum power dissipation
Symbol
V
DSS
V
GSS
T
STG
I
D3
I
DP4
I
AS5
E
AS5
Rating
60
+25
-55 to175
130
90
360
25
250
Units
V
V
ºC
A
A
A
A
mJ
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Maximum power dissipation
T
C
=25
ºC
T
C
=100ºC
P
D
200
90
W
W
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
Thermal resistance,Junction-case
Symbol
R
θJA
R
θJC
Rating
62.5
0.735
Unit
ºC/W
ºC/W
2 of 6
Rev 1.2 Sept 2015
KIA
SEMICONDUCTORS
130A，60V
N-CHANNEL MOSFET
3205S
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Gate resistance
Diode forward voltage
Diode continuous forward current
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)1
R
g
V
SD1
I
S3
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=50V, V
GS
=10V
I
D
=70A
V
DD
=30V, I
D
=70A,
R
G
=25Ω,V
GS
=10V
I
SD
=70A,V
DD
=50V,
dl
SD
/dt=100A/μs
V
DS
=25V,V
GS
=0V,
f=1MHz
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
DS
=250μA
V
DS
=48V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V, V
DS
=0V
V
GS
=10V,I
D
=50A
V
DS
=0V, V
GS
=0V,f=1MHz
I
SD
=50A, V
GS
=0V
60
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
5.5
1.2
0.88
-
15.2
6.16
3100
926
451
20
83.7
108
92.6
66.34
12.35
33.52
-
1
30
4
+100
7
-
1.3
50
-
-
-
-
-
-
-
-
-
-
--
--
nC
ns
pF
V
μA
V
nA
mΩ
Ω
V
A
nS
nC
Note:1. Pulse test; pulse width<300us duty cycle<2%.
2. Guaranteed by design, not subject to production testing.
3. Package limitation current is 50A.Calculated continuous current based on maximum
allowable junction temperature.
4. Repetitive rating, pulse width limited by max junction temperature.
5.Starting T
J
=25℃,L=0.4mH,I
AS
=50A.
3 of 6
Rev 1.2 Sept 2015
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