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KIA24N50H

Description
Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 24A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 200mΩ @ 12A, 10V Maximum power dissipation (Ta =25°C): 290W Type: N channel N channel 24A 500V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size333KB,5 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
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KIA24N50H Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 24A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 200mΩ @ 12A, 10V Maximum power dissipation (Ta =25°C): 290W Type: N channel N channel 24A 500V

KIA24N50H Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)500V
Continuous drain current (Id) at 25°C24A
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance200mΩ @ 12A,10V
Maximum power dissipation (Ta=25°C)290W
typeN channel

KIA24N50H Preview

Download Datasheet
KIA
SEMICONDUCTORS
24A,500V
N-CHANNEL MOSFET
24N50H
1.Description
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power supplies, active power factor correction based on
half bridge topology.
2.
Features
n
n
n
n
n
n
R
DS(ON)
=0.16Ω@V
GS
=10 V
Low gate charge ( typical 90nC)
High ruggedness
Fast switching
100%avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 JAN 2014
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