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KBU808

Description
Reverse peak voltage: 800V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size562KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
Download Datasheet Parametric View All

KBU808 Overview

Reverse peak voltage: 800V Average rectified current (Io): 8A Forward voltage drop (Vf): 1V @ 4A

KBU808 Parametric

Parameter NameAttribute value
Reverse peak voltage800V
Average rectified current (Io)8A
Forward voltage drop (Vf)1V @ 4A

KBU808 Preview

Download Datasheet
KBU8005 THRU KBU810
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
KBU
0.935(23.7)
0.895(22.7)
0.15 x0.23L
(3.8 x5.7L)
HOLE THRU
Forward Current - 8.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.300
(7.5)
0.700(17.8)
0.600(16.8)
0.780(19.8)
0.740(18.8)
AC
0.866
MIN.
(22.0)
0.052(1.3)
DIA.
0.048(1.2)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting:Thru
hole for #6 serew,5in.-lbs. torque max.
Weight:0.27
ounce, 7.59 grams
0.140
(3.5)
0.220(5.6)
0.180(4.6)
0.280(7.1)
0.268(6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Auerage Forward(with heatsink Note 1)
Rectified Current @Tc=100 C(without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 4.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
SYMBOLS
KBU
8005
KBU
801
KBU
802
KBU
804
KBU
806
KBU
808
KBU
810
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
8.0
200.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
10
0.5
200
5.0
-55 to +150
-55 to +150
Volts
µ
A
mA
pF
C/W
C
C
NOTES:
1.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink
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