KBU3501 datasheet, PDF - EEWORLD Datasheet

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KBU3501: DescriptionSingle Phase 35A Silicon Bridge Rectifiers Single Phase 35A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size258KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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KBU3501 Overview

Single Phase 35A Silicon Bridge Rectifiers Single Phase 35A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 35A Silicon Bridge Rectifiers

Product model: KBU3501

product features:

UL Recognized File # E-230084

Surge overload rating -220~400 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded plastic technique

Plastic material has Underwriters Laboratory Flammablilty Classification 94V-0

Mounting Polsition:Any

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 100V

Maximum RMS Voltage VRMS Voltage effective value: 70V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 100V

Maximum Average Forward (with heatsink Note 2) IF(AV) Maximum forward current: 15.0 A

Rectified Current @TC = 100℃(without heatsink) IF(AV) Maximum forward current: 3.2 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load(JEDEC Method) IFSM Maximum forward surge current: 400 A

Maximum Instantaneous Forward Voltage Drop Per Leg @ 5.0A/7.5A/12.5A/17.5A VF Maximum forward voltage drop: 1.1 V

Maximum DC Reverse Current TJ=25℃ IR Maximum reverse leakage current: 10.0μA

At Rated DC Blocking Voltage TJ = 125℃ IR Maximum reverse leakage current: 500μA

(I^2)t Rating for fusing (t<8.3ms) (I^2)t ：240 (A^2)S

Typical Junction Capacitance per element (Note1) CJ：60 pF

Typical Thermal Resistance (Note2) RJC ：0.8 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBU

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