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KBP2010_B0_10001

CategoryDiscrete semiconductor    diode   
File Size149KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

KBP2010_B0_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PSIP-W4
Reach Compliance Codenot_compliant
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

KBP2010_B0_10001 Preview

Download Datasheet
...KBP204~KBP2010
Glass Passivated Bridge Rectifiers
VOLTAGE
400 to 1000 Volt
CURRENT
FEATURES
• UL Recognized File #E228882
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique.
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
•Glass passivated chip junction
2 Ampere
KBPF
Unit: Inch(mm)
MECHANICAL DATA
• Case: KBPF
•Terminals: Leads solderable per MIL-STD-750, Method 2026
• Polarity: As marked on body
• Weight: 1.6g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°
Cambient temperature unless otherwise specified.
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Rating of fusing ( t<8.3ms) (Note1)
Maximum instantaneous forward
voltage per diode
I
F
= 1 A
I
F
= 2 A
Maximum reverse current
@ rated V
R
T
J
=25°
C
T
J
=125°
C
SYMBOL
V
RRM
V
RMS
V
DC
KBP
204
400
280
400
KBP
206
600
420
600
2
60
15
1
1.1
5
500
C
J
R
θJA
R
θJC
T
J
T
STG
23
20
5
- 55 to +150
- 55 to +150
pF
°
C/W
°
C
°
C
KBP
208
800
560
800
KBP
2010
1000
700
1000
UNIT
V
V
V
A
A
I
F(AV)
I
FSM
It
V
F
2
A
s
V
2
I
R
μA
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive, for t>1ms and<8.3ms.
Note 2: Measured at 1MHz and applied Reverse bias of 4V DC
Note 3: Thermal resistance from junction to ambient and from junction to case mounted on PCB
March 13,2017-REV.07
Page 1
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