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HTIP42C

Description
-100V -6A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size37KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HTIP42C Overview

-100V -6A PNP epitaxial planar transistor

Features

Product Name: -100V -6A PNP Epitaxial Planar Transistor


Product model: HTIP42C


Product Description:


The HTIP42C is designed for use in general purpose amplifier and low-speed switching applications.



parameter:


Type: PNP


BVCEO: -100V


IC: -6A


PD: 65W


hFE: MIN 15


hFE: Max. 75


VCE(sat): Max. -1.5V


RoHS: PF(lead-free)


Package: TO-220AB


HTIP42C Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6733
Issued Date : 1994.08.10
Revised Date : 2004.11.19
Page No. : 1/4
HTIP42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP42C is designed for use in general purpose amplifier and switching
applications.
TO-220
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 65 W
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 2 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage...................................................................................................................... -100 V
BV
CEO
Collector to Emitter Voltage................................................................................................................... -100 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current .............................................................................................................................................. -6 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
I
CES
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
-100
-100
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-400
-700
-1
-1.5
-2
-
75
-
MHz
Unit
V
V
uA
uA
mA
V
V
I
C
=-1mA, I
E
=0
I
C
=-30mA, I
B
=0
V
CE
=-100V
V
CE
=-60V
V
EB
=-5V
I
C
=-6A, I
B
=-600mA
I
C
=-6A, V
CE
=-4V
I
C
=-0.3A, V
CE
=-4V
I
C
=-3A, V
CE
=-4V
I
C
=-0.1A, V
CE
=-5V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HTIP42C
HSMC Product Specification
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