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HSC2625

Description
npn epitaxial planar transistor
File Size22KB,2 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
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npn epitaxial planar transistor

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200201
Issued Date : 1996.03.14
Revised Date : 2002.08.13
Page No. : 1/2
HSC2625
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2625 is designed for triple diffused planer type high voltage,
high speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-3P
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 80 W
Maximum Voltages and Currents
VCBO Collector to Base Voltage ....................................................................................... 450 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 7 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current ..................................................................................................................... 3 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Min.
450
400
7
-
-
-
-
10
6
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
100
1.2
1.5
30
-
Unit
V
V
mA
uA
V
V
Test Conditions
IC=1mA
IC=10mA
IE=100uA
VCB=450V
VEB=7V
IC=4A, IB=800mA
IC=4A, IB=800mA
IC=0.5A, VCE=5V
IC=4A, VCE=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HSC2625
HSMC Product Specification
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