Collector to Base Voltage ........................................................................................................................... 80 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 80 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 4 V
I
C
Collector Current ........................................................................................................................................ 500 mA
Thermal Characteristic
Symbol
R
θja
Characteristic
Thermal Resistance, junction to ambient (T
A
=25
o
C)
Max.
556
Unit
o
C/W
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
80
80
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.25
1.2
-
-
-
MHz
Unit
V
V
V
nA
nA
V
V
I
C
=100uA
I
C
=1mA
I
E
=100uA
V
CB
=80V
V
CE
=60V
I
C
=100mA, I
B
=10mA
I
C
=100mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=10mA, V
CE
=2V, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBTA06
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HE6840
Issued Date : 1994.07.29
Revised Date : 2004.09.16
Page No. : 2/4
Saturation Voltage & Collector Current
hFE
V
CE
=1V
100
Saturation Voltage (mV)
100
V
CE(sat)
@ I
C
=10I
B
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
Cutoff Frequency & IC
1000
Cutoff Frequency (MHz)
On Voltage (mV)
V
CE
=2V
100
1000
V
BE(on)
@ V
CE
=1V
100
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
250
PD - Ta
PD(mW) Power Dissipation
200
Capacitance (pF)
150
10
100
Cob
50
1
0.1
1
10
100
1000
0
0
20
40
60
80
100
o
120
140
160
Reverse Biased Voltage (V)
Ambient Temperature Ta ( C)
HMBTA06
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Spec. No. : HE6840
Issued Date : 1994.07.29
Revised Date : 2004.09.16
Page No. : 3/4
1
3
G
Pb Free Mark
Pb-Free: " "
(Note)
Normal: None
B S
1
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
After successful initialization, the function aci_gap_create_connection is used to connect directly according to the address, but it returns 0x46 BLE_STATUS_NOT_ALLOWED. The connection cannot be succe...
1 System Overview
As shown in the figure, this is the principle block diagram of the entire video acquisition system. At the beginning of power-on, the FPGA needs to initialize the register configurat...
After learning that I had the honor to participate in the NXP Rapid IoT evaluation, I started to install the mobile APP. According to my previous experience, I chose to use my mobile phone to log in t...
A Bluetooth Smart Key Fob is a small, coin-cell powered mobile phone accessory that features buttons, a buzzer, LEDs, and an accelerometer, and embodies the use of BLE GATT service profiles such as th...
I am going to use the CAN bus recently. I have three boards with CAN transceiver PHY, a TMS320F28377S LAUNCH, a GD32VF103V EVAL, and a MM32 eMiniBoard. I remember that I had a small board with CAN PHY...
The wireless voice communication system provides a voice dispatching function. On the basis of the existing fixed-line telephone terminals, wireless telephone terminals connected to the wireless netwo...
According to news on March 15, according to Bloomberg, Samsung Electronics is expected to receive more than 6 billion US dollars (currently about 43.2 billion yuan) in "CHIP" subsidy in the United St...[Details]
2021 is a special year for the electronic components industry, in which suppliers, distributors and customers have encountered many unprecedented challenges. However, it is these challenges that brin...[Details]
According to foreign media reports, after the global epidemic situation recurred and the earthquake in Japan further hindered supply, the waiting time for global semiconductor chip delivery was lengt...[Details]
According to news on August 16, it was learned from the official website of the State Intellectual Property Office that Huawei Technologies Co., Ltd. recently disclosed a patent called "Flip-chip pac...[Details]
ASML releases fourth quarter and full year 2020 financial report: • Net sales in the fourth quarter were EUR 4.3 billion, gross margin was 52%, and net income was EUR 1.4 billion • Net booking...[Details]
Recently, Japan and South Korea held a bilateral meeting at the WTO headquarters in Geneva. They failed to reach an agreement on Japan's strengthening of controls on South Korean semiconductors and o...[Details]
The reporter learned from Westlake University that He Ruihua’s research group from the School of Science of Westlake University, together with research collaborators, discovered the world’s first pho...[Details]
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announces financial results for the first quarter ended March 28, 2020, prepared i...[Details]
Increased demand for electric vehicles will lead to an expansion in power semiconductor production capacity Tokyo, Japan, May 17, 2022 - Renesas Electronics, a global supplier of semiconductor solu...[Details]
On April 1, according to foreign media reports, according to people familiar with the matter, on Tuesday local time in the United States, Xerox decided to abandon its $35 billion hostile takeover of ...[Details]
On June 6, TSMC officially welcomed a change of leadership on Tuesday: former chairman Liu Deyin retired and handed over his position to CEO Wei Zhejia. This means that Wei Zhejia has become the fi...[Details]
The price of the MCU you use has increased, but this is not the worst result. In the past 20 years, the price of chips has basically eased after half a year. This year is different. It is approachin...[Details]
Major semiconductor manufacturers have successively expanded new factories, and new wafer foundry capacity will be launched in full swing from 2023. The market expects that there may be a serious sho...[Details]
In the past two years, demand for DRAM memory chips and NAND flash memory chips has been weak, causing prices to remain at a low level, and memory and SSD hard drive products have become increasingly...[Details]
Focusing on smart power and smart industry to build a sustainable future
Shenzhen, China, October 28, 2024 –
STMicroelectronics (ST), a world-leading semiconductor company servin...[Details]
ST - Low Power RF
京公网安备 11010802033920号
EEWORLD
