Collector to Base Voltage........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... 20 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 5 V
I
C
Collector Current ....................................................................................................................................... 700 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE
f
T
Cob
Min.
25
20
5
-
-
-
150
150
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
500
1
500
-
10
MHz
pF
Unit
V
V
V
uA
mV
V
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=150mA
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE
Rank
Range
D9D
150-300
D9E
250-500
HMBT8050
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
10000
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date :2010.10.19
Page No. : 2/4
Saturation Voltage & Collector Current
Saturation Voltage (mV)
1000
V
BE(sat)
@ I
C
=10I
B
V
CE
=1V
hFE
100
100
V
CE(sat)
@ I
C
=100I
B
V
CE(sat)
@ I
C
=10I
B
10
0.1
1
10
100
1000
10000
10
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (MHz)
On Voltage (mV)
V
CE
=10V
1000
V
BE(on)
@ V
CE
=1V
100
100
10
100
1000
10000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
10000
Safe Operating Area
Collector Current (mA)
1000
PT=1ms
Capacitance (pF)
PT=100ms
100
PT=1s
10
Cob
10
1
0.1
1
10
100
1000
1
1
10
100
Reverse-Biased Voltage (V)
Forward Voltage (V)
HMBT8050
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date :2010.10.19
Page No. : 3/4
A
L
3
Rank Code
(D,E)
D 9
B S
Pb Free: "
.
"
Halogen Free: "
. .
"
Normal: None
1
2
Pin Style: 1.Base 2.Emitter 3.Collector
Note: a. Green label is used for pb-free packing
b. Green label and GP logo are used for
halogen free packing
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Regional Sales Headquarters:
•
Head Office(HSMC
CORP.): 3F., No.72, Sec.2, Nanjing E. Rd., Taipei, Taiwan, R.O.C.
Tel: +886-2-2521-2056, Fax: +886-2-2521-0452
•
Shanghai Office(AVANTICS):
No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China
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