HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF830 / HIRF830F
N-CHANNEL POWER MOSFET
HIRF830 Series Pin Assignment
Tab
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
2
3
1
Features
•
Dynamic dv/dt Rating
•
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
1
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
Parameter
Thermal Resistance
Junction to Case Max.
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62
1.71
3.3
Units
°C/W
°C/W
HIRF830 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Drain to Current (Continuous)
Drain to Current (Pulsed) (*1)
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
Derate above 25°C
TO-220AB
TO-220FP
Single Pulse Avalanche Energy (*2)
Avalanche Current (*1)
Repetitive Avalanche Energy (*1)
Peak Diode Recovery (*3)
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
Parameter
Value
500
4.5
18
±20
74
38
0.59
0.3
250
9
7.4
5
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
P
D
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
E
AS
I
AR
E
AR
d
v
/d
t
T
j
T
stg
T
L
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
j
=25°C, L=24mH, R
G
=25Ω, I
AS
=4.5A
*3: I
SD
≤4.5A,
di/dt≤75A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
(T
j
=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=500V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=400V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=2.7A)(*4)
Forward Transconductance (V
DS
=50V, I
D
=2.7A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
=400V, I
D
=3.1A, V
GS
=10V)
(*4)
(V
DD
=250V, I
D
=4.5A, R
G
=50Ω,
R
D
=79Ω)(*4)
V
DS
=25V, V
GS
=0V, f=1MHz
-
-
2
-
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
Min.
500
-
Typ.
-
-
-
-
-
-
-
800
100
50
8.2
46
90
45
-
-
-
4.5
7.5
Max.
-
1
50
100
-100
4
1.5
-
-
-
-
-
-
-
-
38
5
22
-
-
Unit
V
uA
uA
nA
nA
V
Ω
S
pF
2.5
-
-
-
-
-
-
-
-
-
-
-
-
ns
nC
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
nH
nH
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Q
rr
t
on
t
rr
V
SD
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
I
S
=4.5A, V
GS
=0V, T
j
=25°C (*4)
I
F
=3.1A, d
i
/d
t
=100A/us, T
j
=25°C
(*4)
Characteristic
Min.
-
-
-
-
Typ.
1
**
320
-
Max. Units
2
-
640
1.6
ns
V
uC
**: Negligible, Dominated by circuit inductance
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
I RF
830
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α
1
D
α
4
E O
C
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
I RF
830F
Date Code
Control Code
α
2
α
3
α
5
I
N
3
G
J
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
F
2
K
1
M
L
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
-
α1/2/4/5
-
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5
o
*27
o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HIRF830, HIRF830F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200407
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HIRF830, HIRF830F
HSMC Product Specification
Domestic Chip Exchange
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