HER103S datasheet, PDF - EEWORLD Datasheet

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HER103S: DescriptionRectifier Diode, 1 Element, 1A, 200V V(RRM); CategoryDiscrete semiconductor diode; File Size129KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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HER103S Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM)

HER103S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Base Number Matches	1

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HER101S THRU HER108S

高效整流二极管

High Efficient Rectifier

■特征

Features

■外½尺寸和印记

Outline Dimensions and Mark

(A-405 )

.205(5.21)

.166(4.22)

1.0(25.4)

MIN

1.0(25.4)

MIN

●I

1.0A

●VRRM

50V-1000V

●耐正向浪涌电流½力高

●High

surge current capability

●整流用

Rectifier

.080(2.03)

.021(0.53)

Unit: in inches (millimeters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symbol

RRM

F(AV)

FSM

STG

单½

Unit

条件

Conditions

正弦半波

60Hz,电阻负½½,Ta=50

℃

60Hz Half-sine wave, Resistance

load, Ta=50℃

正弦半波

60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave,1 cycle,

Ta=25℃

HER10

100

200

300

400

600

DIA

■用途

Applications

.107(2.72)

.025(0.64)

800 1000

1.0

-55~+125

-55 ~ +150

℃

■电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified)

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

反向恢复时间

Reverse Recovery time

热阻(典型)

Thermal

Resistance(Typical)

符号

Symbol

RRM1

RRM2

J-A

单½

Unit

μA

测试条件

Test Condition

=1.0A

RRM

Ta=25℃

HER10

1.0

1.3

1.7

℃

J-L

Ta=125℃

=0.5A I

=1A

=0.25A

结和环境之间

Between junction and ambient

结和引线之间

Between junction and lead

Document Number 0133

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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