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H1GF3

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size452KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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H1GF3 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

H1GF3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-F2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Download Datasheet
H1A THRU H1M
Surface Mount High Efficient Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● Fast switching for high efficiency
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in high efficient switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Date
Package:
SOD-123FL
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz Half-sine wave, Resistance load,
Ta (FIG.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Tj=25℃
Storage temperature
Junction temperature
VRRM
V
SYMBOL
UNIT
H1A
H1A
50
H1B
H1B
100
H1D
H1D
200
H1G
H1G
400
H1J
H1J
600
H1K
H1K
800
H1M
H1M
1000
IO
A
1.0
IFSM
Tstg
Tj
A
30
-55 ~+150
-55 ~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
SYMBOL
UNIT
TEST
CONDITIONS
IFM=1.0A
IF=0.5A,IR=1.0A,
IRR=0.25A
Ta=25℃
IRRM
μA
Ta=125℃
100
H1A
H1B
H1D
H1G
H1J
H1K
H1M
VF
V
1.0
1.3
1.7
trr
ns
50
5
75
Maximum DC reverse current at
rated DC blocking voltage per diode
1/5
S-S059
Rev. 2.2, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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