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H10N60F

Description
600V 10A N-channel power MOSFET
CategoryDiscrete semiconductor   
File Size205KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

H10N60F Overview

600V 10A N-channel power MOSFET

Features

Product Name: 600V 10A N-channel Power MOSFET


N-Channel Power MOSFET (600V, 10A)


Product model: H10N60F



product features:


H10N60 is a High voltage N Channel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology


Advanced termination scheme to provide enhanced voltageblocking capability


Avalanche Energy Specified


Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;


The packaged product is widely used in AC-DC power suppliers, DCDC converters and H bridge PWM motor drivers



Applications:


Switch Mode Power Supply


Uninterruptable Power Supply


High Speed Power Switching



parameter:


Channel: N


VDSS voltage: 600V


ID Current: 10A


VGS start voltage: ±30V


RDS (on) Max. on-resistance: 1ohm


RDS(on) @VGS : 10V


RDS(on) @ID:5A


ROSH: PF (lead-free)


Package:TO-220FP


H10N60F Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 1/5
H10N60 Series
N-Channel Power MOSFET (600V,10A)
H10N60 Series
Tab
Applications
Switch Mode Power Supply
Uninterruptable Power Supply
High Speed Power Switching
1
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
Features
H10N60
is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
Advanced termination scheme to provide enhanced voltageblocking capability
Avalanche Energy Specified
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
1 2
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3
Pin 3: Source
H10N60 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Continuous Drain Current (V
GS
@10V, T
C
=25 C)
Continuous Drain Current (V
GS
@10V, T
C
=100
o
C)
Pulsed Drain Current
*1
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
68
10
66
-55 to 150
-55 to 150
o
Parameter
Value
600
10
6.4
36
±30
150
50
1.25
0.4
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
JC
JA
H10N60 Series
Parameter
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
TO-220FP
62
1.3
3.5
Units
°C/W
°C/W
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