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H04N65E

Description
650V 4A N-channel power field effect transistor
CategoryDiscrete semiconductor   
File Size170KB,6 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

H04N65E Overview

650V 4A N-channel power field effect transistor

Features

Product Name: 650V 4A N-channel Power Field Effect Transistor


N-Channel Power Field Effect Transistor (650v,4A)


Product model: H04N65E



Product Description:


This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.



product features:


High Current Rating


Lower RDS(ON)<3.0Ω(@VGS=10V,ID=2A)


Lower Capacitances


Lower Total Gate Charge


Tighter VSD Specifications


Avalanche Energy Specified


parameter:


Channel: N


VDSS voltage: 650V


ID Current: 4A


VGS start voltage: ±30V


RDS (on) Max. on-resistance: 3ohm


RDS(on) @VGS : 10V


RDS(on) @ID:2A


ROSH: PF (lead-free)


Package:TO-220AB


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