650V 4A N-channel power field effect transistor
Features
Product Name: 650V 4A N-channel Power Field Effect Transistor
N-Channel Power Field Effect Transistor (650v,4A)
Product model: H04N65E
Product Description:
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
product features:
High Current Rating
Lower RDS(ON)<3.0Ω(@VGS=10V,ID=2A)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
parameter:
Channel: N
VDSS voltage: 650V
ID Current: 4A
VGS start voltage: ±30V
RDS (on) Max. on-resistance: 3ohm
RDS(on) @VGS : 10V
RDS(on) @ID:2A
ROSH: PF (lead-free)
Package:TO-220AB
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