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GS1B-AU_F2_10001

Description
SURFACE MOUNT RECTIFIER
File Size128KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GS1B-AU_F2_10001 Overview

SURFACE MOUNT RECTIFIER

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GS1A-AU~GS1M-AU
SURFACE MOUNT RECTIFIER
VOLTAGE
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Low Forward Drop
• High temperature soldering : 260°C /10 seconds at terminals
• Glass Passivated Chip Junction
• Lead free in comply with EU RoHS 2002/95/EC directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
0.114(2.90)
0.098(2.50)
0.181(4.60)
0.157(4.00)
0
.
012(0
.
305)
0
.
006(0.152)
0.008(0.203)
0.002(0.051)
0.208(5.28)
0.188(4.80)
50 to 1000 Volts
CURRENT
1 Amperes
0.060(1.52)
0.030(0.76)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rse Vo lta g e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo ck i ng Vo lta g e
Ma xi mum A ve ra g e F o rwa rd C urre nth a t T
L
=1 0 0
O
C
P e a k F o r wa r d S ur g e C urre nt : 8 .3 ms s i ng le ha lf si ne -wa ve
sup e ri mp o se d o n ra te d lo a d (JE D E C m e tho d )
Ma xi mum F o rwa rd Vo lta g e a t 1 .0 A
Ma xi mum D C Re ve rse C urre nt a t T
J
=2 5
O
C
Ra te d D C B lo ck i ng Vo lta g e T
J
=1 2 5
O
C
Typ i c a l J uncti o n c a p a ci ta nc e (No te 1 )
Typ i c a l Juncti o n Re s i sta nce (No te 2 )
Op e r a ti ng a nd S to ra g e Te mp e ra ture Ra ng e
S YMB OL GS 1 A -A U GS 1 B -A U GS 1 D -A U GS 1 G-A U GS 1 J-A U GS 1 K -A U GS 1 M-A U UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
C
J
R
θJL
T
J
,T
S TG
50
35
50
100
70
100
200
140
200
0.062(1.60)
0.047(1.20)
400
280
400
1 .0
30
1 .1
1 .0
50
12
30
-5 5 to +1 5 0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μ
A
pF
O
C /
W
C
O
NOTES:1. Measured at 1 MHz and applied V
r
= 4.0 volts.
2. 8.0 mm
2
( .013mm thick ) land areas.
STAD-FEB.04.2009
1
PAGE . 1
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