GBU610 datasheet, PDF - EEWORLD Datasheet

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GBU610: Description6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size230KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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GBU610 Overview

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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GBU6005

THRU

GBU610

SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

6.0 Ampere

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Polarity: marked on body

* Mounting position: Any

* Both normal and Pb free product are available:

* Normal:80~95%Sn,5~20%Pb

* Pb free:99 Sn above can meet Rohs enviroment substance

directive request

.210 .210 .210

.190 .190 .190

(5.33) (5.33) (5.33)

(4.83) (4.83) (4.83)

.022(.56)

.018(.46)

.720(18.29)

.680(17.27)

.083(2.1)

.075(1.9)

.752(19.1)

.720(18.3)

22.2(.874)

21.8(.860)

.139(3.53)

.133(3.37)

.232(5.9)

.224(5.7)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Tc=50 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at

3.0A

D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Rating for fusing (t<8.3ms)

Storage Temperature Range, TSTG

Ta=100 C

GBU6005

GBU601

GBU602

GBU604

GBU606

GBU608

GBU610

UNITS

100

200

140

200

400

280

400

6.0

200

1.0

100

127.0

-55 +150

600

420

600

800

560

800

1000

700

1000

sec

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