GBPC5010 datasheet, PDF - EEWORLD Datasheet

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GBPC5010: DescriptionSingle Phase 50A Silicon Bridge Rectifiers Single Phase 50A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size195KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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GBPC5010 Overview

Single Phase 50A Silicon Bridge Rectifiers Single Phase 50A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 50A Silicon Bridge Rectifiers

Product model: GBPC5010

product features:

UL Recognized File # E-230084

Ideal for printed circuit boards

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

260℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic

Lead: solder plated

Polarity: As marked

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V

Maximum RMS Voltage VRMS Voltage effective value: 700V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V

Maximum Average Forward Rectified Current @TC=55℃ IF(AV) Maximum forward current: 50 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 400 A

Maximum Instantaneous Forward Voltage @ 25A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated DC blocking voltage Per Element IR Maximum reverse leakage current: 10μA

Typical Thermal Resistance (Note) RθJC Thermal resistance coefficient: 1.5 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: GBPC

GBPC5010 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	500 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	50 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Base Number Matches	1

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GBPC50005 THRU GBPC5010

RoHS

COMPLIANT

Bridge Rectifiers

Features

●Universal 3-way terminals: snap-on, wire

wrap-around, or PCB mounting

● High surge current capability

● Low thermal resistance

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

General purpose use in AC/DC bridge full wave rectification for

power supply, home appliances, office equipment, industrial

automation applications.

Mechanical Data

●

Package:

GBPC

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

●

Terminals:

Tin plated leads, solderable per

J-STD-002 and JESD22-B102

■

Maximum Ratings

(Ta=25℃ Unless otherwise specified)

PARAMETER

Device marking code

Repetitive Peak Reverse Voltage

Average Rectified Output Current

@60Hz sine wave, R-load, With heatsink,

Tc=55℃

Surge(Non-repetitive)Forward Current

@60HZ Half- sine Wave, 1 cycle,

Ta=25℃

Current Squared Time @1ms≤t≤8.3ms

Tj=25℃, Rating of per diode

Storage Temperature

Junction Temperature

Dielectric Strength, Terminals to case,

AC 1 minute

Mounting Torque

VRRM

SYMBOL UNIT

GBPC50005

GBPC5001 GBPC5002 GBPC5004 GBPC5006 GBPC5008 GBPC5010

100

200

400

600

800

1000

IFSM

Tstg

℃

500

1040

-55 ~+150

2.5

dis

TOR

kg·cm

■

Electrical Characteristics

(Ta=25℃ Unless otherwise specified)

PARAMETER

Maximum instantaneous forward

voltage drop per diode

Maximum DC reverse current at

rated DC blocking voltage per diode

SYMBOL UNIT

VFM

IRRM

GBPC50

TEST

005

CONDITIONS

IFM=

25A

GBPC50

GBPC50 GBPC50 GBPC50 GBPC50 GBPC50

1.1

μA VRM=VRRM

■

Thermal Characteristics

(Ta=25℃ Unless otherwise specified)

PARAMETER

Thermal

Resistance

Between junction and

case, With heatsink

SYMBOL

θJ-C

UNIT

℃/W

GBPC50

005

GBPC50

0.95

GBPC50

1/4

S-C034

Rev. 2.1, 28-Apr-15

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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