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GBP410

CategoryDiscrete semiconductor    Rectifier bridge   
File Size195KB,2 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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GBP4005 THRU GBP410
SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
.UL
Listed Under Recognized Component Index,
File Number E338195
.Glass
passivated chip junctions
.High
case dielectric stength
.Low
Reverse Leakage Current
.High
surge current capability
.Ideal
for Printed Circuit Board Applications
GBP
.110(2.8) .580(14.75)
45°
.561(14.25)
Chamfer
.057(1.45)
.046(1.17)
.034(0.86)
.026(0.67)
.134(3.4)
.126(3.2)
.425(10.8)
.394(10.0)
.276(7.0)
.236(6.0)
.106(2.7)
.091(2.3)
MECHANICAL DATA
.Case:
GBP
.Case
Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
.Terminals:
Pure tin plated, Lead free.
Leads solderable per MIL-STD-750, Method 2026.
.Polarity:
Marked on body
.Weight:
1.5 grams
.Mounting
position: Any
.043(1.1)
.035(0.9)
.024(0.6)
.016(0.4)
.160(4.1) SPACING
.140(3.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @ T
C
=100°C(without heatsink)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage
Drop per element
Maximum DC Reverse Current
at rated DC blocking voltage
I
2
t Rating for Fusing (t﹤8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
Operating Junction Temperature
@ 4.0A DC
@ 2.0A DC
@T
J
=25°C
@T
J
=125°C
SYM
BOL
GBP
4005
50
35
50
GBP
401
100
70
100
GBP
402
200
140
200
GBP
404
400
280
400
4.0
2.0
120
1.1
1.0
5.0
500.0
59.7
40
3.0
-55 to +150
-55 to +150
GBP
406
600
420
600
GBP
408
800
560
800
GBP
410
1000
700
1000
units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
(JC)
T
STG
T
J
A
V
μA
A
2
Sec
pF
°C/W
°C
°C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
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