GBP210 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> GBP210

GBP210: DescriptionSingle Phase 2.0A Silicon Bridge Rectifiers Single Phase 2.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size261KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

Parametric View All

GBP210 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	GBP210	-	-	View	Buy Now

GBP210 Overview

Single Phase 2.0A Silicon Bridge Rectifiers Single Phase 2.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 2.0A Silicon Bridge Rectifiers

Product model: GBP210

product features:

UL Recognized File # E-230084

Ideal for printed circuit board

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

250℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic

Lead: solder plated

Polarity: As marked

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V

Maximum RMS Voltage VRMS Voltage effective value: 700V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V

Maximum Average Forward Rectified Current @TA=50℃ IF(AV) Maximum forward current: 2.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 60 A

Maximum Instantaneous Forward Voltage @ 2.0A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA

DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 500μA

Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 32 ℃/W ; RθJC Thermal resistance coefficient: 13 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: GBP

GBP210 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PSIP-T4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JESD-30 code	R-PSIP-T4
Maximum non-repetitive peak forward current	60 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

GBP210 Preview

Download Datasheet

View All

Recommended Resources

Troubleshooting circuit failures

ramp generator circuit

DC relay delayed release circuit 4

Radio frequency remote control switch transmitter circuit

Yinde GX-60A high temperature electronic disinfection cabinet circuit diagram

M50163-150SP (TV) infrared remote control receiving microprocessor

What is the difference between bandwidth "M" and broadband "M"? Are the two "M" the same thing?: What is the difference between bandwidth "M" and broadband "M"? Are the two "M" the same thing?...; aigtekatdz Test/Measurement

Application of Zigbee in .Net Micro Framework System: Zigbee is synonymous with the IEEE 802.15.4 protocol. The technology specified by this protocol is a short-range, low-power wireless communication technology. The name comes from the bee's figure-eigh...; Jacktang Wireless Connectivity

Porter-2: Low voltage output feedback circuit processing: Support this section and be a happy porter. The problem originates from the discussion in the following post, where 3.3V output feedback is used to add an auxiliary power supply winding. https://bbs.e...; 不亦心 Circuit Observation Room

EEWORLD University Hall--The production process of a PCB board: The production process of a PCB board : https://training.eeworld.com.cn/course/5365The production process of a PCB board...; 木犯001号 Embedded System

Watch JD Live and win a new Tektronix oscilloscope!: Has everyone watched the recent technical live broadcast ?Today I will share with you a live broadcast where you have a chance to win a new Tektronix TBS2000B oscilloscope!Click this link and fill in ...; eric_wang Integrated technical exchanges

[Silicon Labs BG22-EK4108A Bluetooth Development Review] Part 3: Bluetooth SoC - Blinky Code Functions and Framework: In the last evaluation, we learned about the Bluetooth protocol layering and host main protocol layer description, and learned about the reading and writing of Bluetooth BLE LED light services. This t...; 妄星y Development Kits Review Area

Popular Components