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ES3HB

Description
Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode
CategoryDiscrete semiconductor   
File Size142KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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ES3HB Overview

Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode


Product model: ES3HB


product features:


I:3.0A


VRRM :50V-600V


High forward surge current capability


High surge forward current capability


Package: Molded plastic


Cases: Molded plastic



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 500V



Average Forward Current IF(AV) Average forward current: 3.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 100A



Junction Temperature TJ :-55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=3.0A) VFM Forward peak voltage: 1.7V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA


IRRM2 (Ta=125℃) Reverse peak current: 500μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 47 ℃/W; RθJ-L Thermal resistance (typical) : 12 ℃/W



Package: DO-214AA (SMB)


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ES3AB THRU ES3JB
超快恢复整流二极管
Super Fast Recovery Rectifier Diode
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
DO-214AA(SMB)
.0 85(2.15)
.0 73(1.85)
.1 87(4.75)
.1 67(4.25)
.1 03(2.61)
.0 78(1.99)
.056 (1.4 1)
.035 (0.9 0)
.0 08(0.20)
.0 04(0.10)
.220 (5.5 9)
.205 (5.2 1)
.155 (3.9 4)
.130 (3.3 0)
I
o
3.0A
V
RRM
50V-600V
耐正向浪涌电流½力高
High surge current capability
封装:模压塑料
Cases: Molded plastic
M ounting P ad Layout
0.069
(1.76)
0.1 07
(2 .72)
0 .08 1(2 .072)
.0 12(0.31)
.0 06(0.15)
0 .228
(5.8 0)
■用途
Applications
●整流用
Rectifier
D im ensions in inches and (m illim eters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
符号
Symbol
V
RRM
I
F(AV)
单½
Unit
V
测试条件
Test Conditions
AB BB CB
50
正 弦 半 波
60Hz
, 电 阻 负 ½½ ,
T
L
=100℃
60HZ Half-sine wave, Resistance
load, T
L
=100℃
正弦半波60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
100
ES3
DB FB GB
300
400
HB JB
500 600
150 200
A
3.0
I
FSM
T
J
T
STG
A
100
-55~+150
-55 ~ +150
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
最大反向恢复时间
Maximum reverse recovery
time
反向漏电流
Peak Reverse Current
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
F
t
rr
I
RRM1
I
RRM2
R
θ
J-A
单½
Unit
V
ns
μA
测试条件
Test Condition
I
F
=3.0A
I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
V
RM
=V
RRM
Ta =25℃
Ta =100℃
ES3
AB BB CB
0.95
35
10
500
47
1)
12
1)
DB FB GB
1.3
HB JB
1.7
/W
R
θ
J-L
结和环境之间
Between junction and ambient
结和终端之间
Between junction and terminal
备注:Notes:
1)
热阻从结到环境及从结到引线,在电路板的
0.2" x 0.2" (5.0毫米 x 5.0毫米)铜垫片区
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
Document Number 0174
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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