ES1BW datasheet, PDF - EEWORLD Datasheet

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ES1BW: DescriptionSuper Fast Recovery Rectifier Super Fast Recovery Rectifier Diode; CategoryDiscrete semiconductor; File Size131KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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ES1BW Overview

Super Fast Recovery Rectifier Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier

Product model: ES1BW

product features:

I：1.0A

VRRM ：50V-600V

High forward surge current capability

High surge forward current capability

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 100V

Average Forward Current IF(AV) Average forward current: 1.0A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A

Junction Temperature TJ ：-55 to +125 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=1.0A) VFM Forward peak voltage: 0.95V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA

IRRM2 (Ta=125℃) Reverse peak current: 50μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 55 ℃/W; RθJ-L Thermal resistance (typical) : 25 ℃/W

Package: SMA-W

ES1BW Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
Maximum non-repetitive peak forward current	30 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.035 µs
surface mount	YES

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ES1AW THRU ES1JW

超快恢复二极管

Super Fast Rectifier

■特征

Features

■外½尺寸和印记

SMA-W

.181(4.60)

.157(4.00)

.104(2.65)

.095(2.40)

Outline Dimensions and Mark

Mounting Pad Layout

0.065

(1.66)

0.080

(2.04)

0.077(1.96)

●I

1.0A

●VRRM

50V-600V

●耐正向浪涌电流½力高

●High

surge current capability

.205(5.20)

.189(4.80)

■用途

Applications

.089(2.25)

.096(2.45)

0.220

(5.58)

●整流用

Rectifier

.059(1.50)

.031(0.80)

.004(0.10)

.007(0.20)

.064(1.63)

.050(1.27)

Dimensions in inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symb

RRM

F(AV)

FSM

STG

单½

Unit

条件

Conditions

ES1

AW BW CW DW FW

100

150

200

300

GW HW JW

400

500

600

℃

正弦半波

60Hz,电阻负½½,Ta=50

℃

60Hz Half-sine wave, Resistance

load, Ta=50℃

正弦半波

60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave,1 cycle,

Ta=25℃

1.0

-55~+125

-55 ~ +150

■电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified)

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

反向恢复时间

Reverse Recovery time

热阻(典型)

Thermal

Resistance(Typical)

符号

Symbol

RRM1

RRM2

trr

J-A

单½

Unit

μA

测试条件

Test Condition

=1.0A

RRM

Ta=25℃

ES1

BW CW DW FW GW

0.95

1.3

HW JW

1.7

℃

J-L

Ta=125℃

=0.5A I

=1A

=0.25A

结和环境之间

Between junction and ambient

结和引线之间

Between junction and lead

Document Number 0170

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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