ER2001CT_T0_00001 datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> diode> ER2001CT_T0_00001

ER2001CT_T0_00001: DescriptionRectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Parametric View All

ER2001CT_T0_00001 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	ER2001CT_T0_00001	-	-	View	Buy Now

ER2001CT_T0_00001 Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB,

ER2001CT_T0_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	R-PSFM-T3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

ER2001CT_T0_00001 Preview

Download Datasheet

View All

ER2000CT~ER2006CT

ISOLATION SUPERFAST RECOVERY RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forward voltage, high current capability

• High surge capacity.

• Super fast recovery times, high voltage.

• Epitaxial chip construction.

• Lead free in comply with EU RoHS 2011/65/EU directives

50 to 600 Volts

CURRENT

20.0 Amperes

MECHANICAL DATA

• Case: TO-220AB Molded plastic

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive loa d.

For capacitive load, derate current by 20%

PARAMETER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current at T

=90

Peak Forward Surge Current : 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage at 10A

Maximum DC Reverse Current at Rated DC Blocking

Voltage

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 1)

Typical thermal Resistance (Note 3)

Operating Junction and Storage Temperature Range

=25

=100

SYMBOL

RRM

RMS

F(AV)

FSM

ER2000CT

ER2001CT

ER2001ACT

ER2002CT

ER2003CT

ER2004CT

ER2006CT

UNITS

100

150

105

150

200

140

200

150

300

210

300

400

280

400

600

420

600

0.95

500

-50 to +150

1.3

1.7

A

Jc

STG

100

C/W

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

3. Both Bonding and Chip structure are available.

January 17 2013-REV.03

PAGE . 1

Recommended Resources

Photoelectric tracking control circuit

5W 40-500kHz power amplifier

Photosensitive transistor light controlled rectifier bridge trigger thyristor

Delay and stretch circuit diagram

Jinniu charger circuit

Capacitor started single phase motor

Maintenance of Fukang LPG dual fuel car: LPG (Liquefied Petroleum Gas) is an efficient, safe and clean alternative fuel for automobiles. It is the most mature low-pollution automobile fuel for promotion. The promotion and application of LPG ...; frozenviolet Automotive Electronics

GaN Power HEMT > 650 V: Parametric Analysis and Comparison with SiC MOSFET: Over the past few years, SiC MOSFETs have dominated high voltage (600V) and high power applications. Advantages such as thermal conductivity, high critical field, greatly improved switching efficiency...; 兰博 RF/Wirelessly

Voltage controlled current source composed of opa547: I want to use op07 and opa547 chips to form a voltage-controlled current source. The problem I encounter now is that the voltage at the positive and negative ends of opa547 are not equal. Why is this?...; alllllll Analog electronics

[GUIX①, one of threadX components] guix text button: [i=s]This post was last edited by RCSN on 2021-2-1 09:31[/i]Compared with LGVL, ThreadX GUIX currently has less information in China. Anfulai's tutorial is also starting to be made, which is also quit...; RCSN MCU

Qorvo Technology Video: GaN Solutions for Sub-6 GHz 5G Base Station Applications: This presentation will cover 5G infrastructure market trends and advanced technologies to achieve the required performance. We will specifically focus on GaN technology and how it can enable high powe...; 兰博 RF/Wirelessly

[Jihai M3 core APM32E103VET6S MINI development board] 02. USART online interaction function: The APM32E103VET6S MINI development board has a DB9 RS-232 interface. The J3 jumper is used to select whether to connect to the MCU's USART1 or USART2 port pins, as shown in the following figure:This ...; xld0932 Domestic Chip Exchange

Popular Components