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ER100_09

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size38KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER100_09 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-41

ER100_09 Preview

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ER100 ~ ER108
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Superfast recovery times-epitaxial construction.
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
• Low leakage.
• High surge capability.
• In compliance with EU RoHS 2002/95/EC directives
.107(2.7)
.034(.86)
50 to 800 Volts
CURRENT
1.0 Ampere
DO-41
Unit: inch(mm)
1.0(25.4)MIN.
.205(5.2)
.160(4.1)
1.0(25.4)MIN.
.028(.71)
MECHANICALDATA
• Case: Molded plastic, DO-41.
• Terminals: Axial leads, solderable to MIL-STD-750, Method 2026
• Polarity: Color Band denotes cathode end.
• Mounting Position: Any
• Weight: 0.0118 ounce, 0.397 gram
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
E R 1 0 0 E R 1 0 1 E R 1 0 1 A E R 1 0 2 E R 1 0 3 E R 1 0 4 E R 1 0 6 E R 1 0 8
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
, T
S T G
0 .9 5
1 .0
150
17
35
O
50
35
50
100
70
100
150
105
150
200
140
200
1 .0
30
300
210
300
400
280
400
600
420
600
800
560
800
V
V
V
A
A
1 .2 5
1 .7
2 .5
V
µ
A
pF
ns
C /
W
C
50
-5 5 to +1 5 0
O
NOTES:
1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
STAD-MAR.05.2009
PAGE . 1
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