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ER1006_00001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1006_00001 Overview

Rectifier Diode

ER1006_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
Is SamacsysN
Diode typeRECTIFIER DIODE
Base Number Matches1

ER1006_00001 Preview

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ER1000~ER1006
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Lead free in comply with EU RoHS 2011/65/EU directives
50 to 600 Volts
CURRENT
10 Amperes
MECHANICAL DATA
• Case: TO-220AC Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c urr e nt P e a k Re ve rs e Vo lta g e
Ma xi m um RMS Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa r d C urr e nt a t T
C
=1 0 0
O
C
P e a k F o rwa rd S urg e C ur re nt, 8 .3 m s s i ng le ha lf s i ne -wa ve
s up e ri m p o s e d o n ra te d lo a d (J E D E C m e tho d )
Ma xi m um F o rwa rd Vo lta g e a t 1 0 A , p e r e le m e nt
Ma xi m um D C Re ve r s e C ur re nt a t Ra te d D C B lo c k i ng T
J
=2 5
O
C
T
J
=1 0 0
O
C
Vo lta g e
Ma xi m um Re ve rs e Re c o ve r y Ti me (No te 2 )
Typ i c a l J unc ti o n C a p a c i ta nc e ( No te 1 )
Typ i c a l The rm a l Re s i s ta nc e
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e r a tur e Ra ng e
S YM B OL
E R1 0 0 0 E R1 0 0 1 E R1 0 0 1 A E R1 0 0 2 E R1 0 0 3 E R1 0 0 4 E R1 0 0 6
UNITS
V
RRM
V
RMS
V
DC
I
F ( AV )
I
F S M
V
F
I
R
t
rr
C
J
R
J
C
T
J
,T
S TG
35
62
3
- 5 5 to +1 5 0
0 .9 5
1
500
50
50
35
50
100
70
100
150
105
150
200
140
200
10
150
1 .3
1.7
300
210
300
400
280
400
600
420
600
V
V
V
A
A
V
A
ns
pF
O
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
February 5,2013-REV.05
PAGE . 1
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