ED1004CS datasheet, PDF - EEWORLD Datasheet

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ED1004CS: Description10 A, 300 V, SILICON, RECTIFIER DIODE, TO-252AA; CategoryDiscrete semiconductor diode; File Size35KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ED1004CS Overview

10 A, 300 V, SILICON, RECTIFIER DIODE, TO-252AA

ED1004CS Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	DPAK-3/2
Reach Compliance Code	compli
application	EFFICIENCY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	100 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE

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DATA SHEET

ED1002CS~ED1006CS

SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

VOLTAGE

FEATURES

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Easy pick and place

• Superfast recovery times for high efficiency

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• Glass passivated junction

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

.225(5.7)

.209(5.3)

0.040(1.0)

.02(0.5)

.032(0.8)

.012(0.3)

.09 .09

(2.3) (2.3)

.071(1.8)

.051(1.3)

.264(6.7)

.248(6.3)

.098(2.5)

.082(2.1)

.024(0.6)

.016(0.4)

200 to 600 Volts

CURRENT

10 Amperes

TO-252 / DPAK

Unit : inch (mm)

MECHANICALDATA

Case: D PAK/TO-252 molded plastic

Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

Polarity: Color band denotes cathode

Standard packaging: 16mm tape (EIA-481)

Weight: 0.015 ounce, 0.4 gram.

.063(1.6)

.047(1.2)

.106(2.7)

.090(2.3)

.216(5.5)

.200(5.1)

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

Maxi mum Recurrent Peak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C Blocki ng Voltage

Maxi mum Average Forward C urrent .375"(9.5mm)

lead length at Tc=100

Peak Forward Surge C urrent, 8.3ms si ngle half si ne-wave

superi mposed on rated load(JED EC method)

Maxi mum Forward Voltage at 5.0A

Maxi mum D C Reverse C urrent T

=25

at Rated D C Blocki ng VoltageT

=100

Maxi mum Reverse Recovery Ti me (Note 1)

Maxi mum thermal Resi stance (Note 2)

Operati ng and Storage Temperature RangeT

STG

SYMBOL

RRM

RMS

FSM

RθJC

RθJA

STG

E D 1002C S

200

140

200

E D 1003C S

300

210

300

E D 1004C S

400

280

400

E D 1006C S

600

420

600

UNITS

10.0

100

0.95

1.3

5.0

-55 TO +150

1.7

C/W

NOTES:

1. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

2. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas.

3. Both Bonding and Chip structure are available.

STAD-APR.08.2004

PAGE . 1

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