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DTC114TCA

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size93KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/
Environmental Compliance

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

DTC114TCA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

DTC114TCA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerJCET
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)100
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON

DTC114TCA Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC114TE/DTC114TUA
DTC114TKA/DTC114TCA /DTC114TSA
DIGITAL TRANSISTOR (NPN)
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTC114TE
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 04
SOT-323
Addreviated symbol: 04
DTC114TUA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-523
DTC114TKA
(1) Base
(2) Emitter
(3) Collector
DTC114TCA
DTA114ECA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23-3L
Addreviated symbol:04
SOT-23
Addreviated symbol: 04
DTC114TSA
(1) Emitter
(2) Collector
(3) Base
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