DB107S datasheet, PDF - EEWORLD Datasheet

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DB107S: DescriptionSingle Phase 1.0A Silicon Bridge Rectifiers Single Phase 1.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size675KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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DB107S Overview

Single Phase 1.0A Silicon Bridge Rectifiers Single Phase 1.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 1.0A Silicon Bridge Rectifiers

Product model: DB107S

product features:

UL Recognized File # E-230084

Ideal for printed circuit boards

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

250℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic

Lead: solder plated

Polarity: As marked

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V

Maximum RMS Voltage VRMS Voltage effective value: 700V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V

Maximum Average Forward Rectified Current @TA = 50℃ I(AV) Maximum forward current: 1.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 50 A

Maximum Instantaneous Forward Voltage @ 1.5 A VF Maximum forward voltage drop: 1.1 V

Maximum DC Reverse Current @ TA = 25 ° C IR Maximum reverse leakage current: 5 μA

rated DC blocking voltage per leg TA=125℃ IR Maximum reverse leakage current: 100μA

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: DBS

DB107S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	YES
Terminal surface	Tin (Sn)

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DB101S THRU DB107S

Bridge Rectifiers

Features

● UL recognition, file #E313149

● Ideal for automated placement

● High surge current capability

● Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °

RoHS

COMPLIANT

Typical Applications

General purpose use in AC/DC bridge full wave rectification for

SMPS, lighting ballast, adapter, battery charger, home

appliances, office equipment, and telecommunication

applications.

Mechanical Data

●

Package:

DBS

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, Halogen free

●

Terminals:

Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Polarity:

As marked on body

■

Maximum Ratings

(Ta=25℃ Unless otherwise specified

）

PARAMETER

Device marking code

Repetitive peak reverse voltage

Average rectified output

On glass-epoxi

current @60Hz sine wave,

substrate

R-load, Ta=40℃

Surge(non-repetitive)forward current

@60Hz half sine wave, 1 cycle, Tj=25℃

Current squared time

@1ms≤t≤8.3ms Tj=25℃, Rating of per diode

Storage temperature

Junction temperature

RRM

IFSM

Tstg

SYMBOL

UNIT

DB101S

DB102S

100

DB103S

200

DB104S

400

DB105S

600

DB106S

800

DB107S

1000

℃

1.0

3.7

-55 ~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous forward

voltage drop per diode

Maximum DC reverse current at

rated DC blocking voltage per diode

SYMBOL UNIT

IRRM

TEST

CONDITIONS

IFM=0.5A

DB101S

DB102S

DB103S

DB104S

1.00

DB105S

DB106S

DB107S

μA V

RRM

1/4

S-S010

Rev. 2.1, 28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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