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CJ78M15

Description
Three terminal positive voltage regulator
CategoryPower management   
File Size419KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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CJ78M15 Overview

Three terminal positive voltage regulator

Features

Product Name: Three-Terminal Positive Voltage Regulator


Product model: CJ78M15


product features:


Maximum output current


IOM: 0.5 A


Output voltage


Vo: 15V


Continuous total dissipation


PD: 1.25 W (Ta = 25 ℃ )




Product parameters:


Pd power dissipation: 1250mW


Io rectified current: 500mA


Vi input voltage: 35V


VIROC :17.5~30V


VO output voltage: 14.4~15.6V


Iq Quiescent current: 6mA



Package: TO-252-2L(4R)

CJ78M15 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Regulators
CJ78M15
Three-terminal positive voltage regulator
FEATURES
Maximum Output current I
OM
:
0.5
A
Output voltage V
O
: 15V
Continuous total dissipation
P
D
: 1.25 W (Ta= 25
℃)
TO-251
TO-252-2L
1.IN
2.GND
3.OUT
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Output
Voltage
Symbol
Vo
Symbol
V
i
T
OPR
T
STG
Value
35
0-+125
-65-+150
Unit
V
Min
25℃
0-125℃
25℃
25℃
25℃
25℃
25℃
0-125℃
0-125℃
25℃
54
2
25℃
90
14.4
14.25
Typ
15
15
Max
15.6
15.75
300
150
100
50
6
0.8
0.5
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
μV
dB
V
ELECTRICAL CHARACTERISTICS
(V
i
=23V,Io=350mA, C
i
=0.33μF,C
o
=0.1μF, unless otherwise specified )
Test conditions
V
i
=23V,Io=350mA
17.5≤V
i
≤30V,
Io=5mA~350mA
Po≤15W
Load Regulation
Line
Regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
ΔVo
ΔVo
Iq
ΔIq
ΔIq
V
N
RR
Vd
Io=5mA~500mA
Io=5mA~200mA
17.5V≤V
i
≤30V,
Io=200mA
20V≤V
i
≤26V,
Io=200mA
=
i
23V,Io 350mA
V =
17.5V≤V
i
≤30V,
Io=200mA
V
i
=23V,
Io=5mA~350mA
10Hz≤f≤100KHz
18.5≤V
i
≤28.5V,f=120Hz,Io=300mA
0-125℃
TYPICAL APPLICATION
Vi
1
CJ78M15
UTC
C
i
2
3
Vo
0.5A
C
o
0.1μF
0.33μF
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