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CJ78L18(SOT89-3)

Description
Three terminal positive voltage regulator
CategoryPower management   
File Size436KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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CJ78L18(SOT89-3) Overview

Three terminal positive voltage regulator

Features

Product Name: Three-Terminal Positive Voltage Regulator


Product model: CJ78L18 (SOT89-3)


product features:


Maximum Output current


IOM: 0.1 A


Output voltage


In: 18V


Continuous total dissipation


PD: 0. 5W




Product parameters:


Pd power dissipation: 500mW


Io rectified current: 100mA


Vi input voltage: 35V


VIROC :20.5~33V


VO output voltage: 17.3V


Iq Quiescent current: 6.5mA



Package: SOT89-3L

CJ78L18(SOT89-3) Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89-3L Encapsulate Three-terminal Voltage Regulators
SOT-89-3L
1.OUT
CJ78L18
Three
-terminal positive voltage regulator
FEATURES
Maximum
output
current
I
OM:
0.1 A
Output voltage
V
O
: 18 V
Continuous total dissipation
P
D
: 0.5 W
2.GND
1
2
3
3.IN
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Output voltage
Symbol
Vo
Symbol
V
i
T
OPR
T
STG
Test conditions
25℃
20.5V≤V
i
≤33V,
Io=1mA-40mA
V
i
=26V, Io=1mA-70mA
Load Regulation
Line regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
TYPICAL APPLICATION
Vo
Vo
Iq
Iq
Iq
V
N
RR
Vd
Vi
22V≤Vi≤33V, Io=40mA
1mA≤I
O
≤40mA,
Vi=26V
10Hz≤f≤100KHz
21.5V≤Vi≤31.5V,f=120Hz
T
j
=25℃
3
UTC
CJ78L18
2
Ci
0.33μF
Co
0.1μF
1
Vo
Io=1mA-100mA, V
i
=26V
Io=1mA-40mA, V
i
=26V
20.5V≤Vi≤33V,Io=40mA
22V≤Vi≤33V, Io=40mA
0-125℃
25℃
25℃
25℃
25℃
25℃
0-125℃
0-125℃
25℃
0-125℃
25℃
32
89
36
1.7
Value
35
0-+125
-55-+150
Min
17.3
17.1
17.1
Typ
18
18
18
27
19
70
64
4.7
Unit
V
Max
18.7
18.9
18.9
180
90
360
300
6.5
1.5
0.1
Unit
V
V
V
mV
mV
mV
mV
mA
mA
mA
µV
dB
V
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JINCTION TEMPERATURE
(Vi=26V,Io=40mA,Ci=0.33μF,Co=0.1μF, unless otherwise specified)
Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
possible to the regulators.
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