EEWORLDEEWORLDEEWORLD

Part Number

Search

SGK1314-50A

Description
RF Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size321KB,6 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric View All

SGK1314-50A Overview

RF Power Field-Effect Transistor,

SGK1314-50A Parametric

Parameter NameAttribute value
MakerSUMITOMO
package instruction,
Reach Compliance Codeunknown

SGK1314-50A Preview

SGK1314-50A
Ku-Band Internally Matched GaN-HEMT
FEATURES
High Output Power: Pout=47.0dBm (Typ.)
High Gain: GL=8.0dB (Typ.)
High P.A.E.:
add=29%
(Typ.)
Broad Band: 13.75 to 14.5GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The SGK1314-50A is a high power GaN-HEMT that is
internally matched for standard communication bands to
provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
26
-10
140
-55 to +125
+250
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION
Item
Drain-Source Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
V
DS
I
GF
I
GR
T
ch
Rg=50ohm
Rg=50ohm
Condition
Limit
<=24
<=17.6
>=-5.4
<+192
Unit
V
mA
mA
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Saturated Drain Current
Trans Conductance
Pinch-off Voltage
Output Power
at Pin=42dBm
Linear Gain
at Pin=27dBm
Drain Current
at Pin=42dBm
Power Added Efficiency at Pin=42dBm
Symbol
I
DSS
Gm
V
P
P
out
GL
I
DSR
add
G
IM
3
R
th
T
ch
IBK
YES
Class 1C
V
DS
=10V,
V
DS
=24V,
V
DS
=10V,
Condition
V
GS
=0V
I
DS
=2.2A
I
DS
=2.2mA
Limit
Min.
-
-
-1.5
46.0
7.0
-
-
-
Typ.
11.0
5.1
-3
47.0
8.0
5.0
29
-
-
1.3
110
Max.
-
-
-4.5
-
-
6.0
-
1.6
-
1.6
150
Unit
A
S
V
dBm
dB
A
%
dB
dBc
deg.C/W
deg.C
V
DS
=24V(Typ.)
I
DS(DC)
=1.5A(Typ.)
f=13.75 to 14.5 GHz
f=13.75GHz, 14.5GHz
f=10MHz,
2-tone Test
Pout=40dBm (S.C.L.)
Channel to Case
(V
DS
x I
DSR
– P
out
+ P
in
) x R
th
Gain Flatness
3
rd
Order Inter modulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE
RoHS Compliance
ESD
-25
-
-
S.C.L. : Single Carrier Level
1000V to <2000V
Note :
Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)
Edition 1.1
Aug. 2014
1
SGK1314-50A
Ku-Band Internally Matched GaN-HEMT
RF Characteristics
Power Derating Curve
160
140
Total Power Dissipation (W)
Output Power (dBm)
120
100
80
60
40
20
0
0
50
100
150
200
250
Case Temperature (deg.C)
300
48
46
44
42
40
38
36
34
32
30
28
18 20 22 24 26 28 30 32 34 36 38 40 42 44
Input Power (dBm)
Output Power & Power Added
Efficiency vs. Input Power
V
DS
=24V, I
DS(DC)
=1.5A
50
45
40
35
30
25
20
15
10
5
0
Power Added Efficiency (%)
Output Power vs. Frequency
V
DS
=24V, I
DS(DC)
=1.5A
48
46
44
Output Power (dBm)
IM3 & IM5(dBc)
42
40
38
36
34
32
30
28
26
13.6
13.8
14.0
14.2
14.4
Frequency (GHz)
28[dBm]
38[dBm]
42[dBm]
14.6
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
IMD vs. Output Power(S.C.L.)
V
DS
=24V, I
DS(DC)
=1.5A
IM3
IM5
22 24 26 28 30 32 34 36 38 40 42
Output Power(S.C.L.) (dBm)
20[dBm]
36[dBm]
41[dBm]
32[dBm]
40[dBm]
P3dB
Edition 1.1
Aug. 2014
2
SGK1314-50A
Ku-Band Internally Matched GaN-HEMT
S-Parameter
S11
MAG
ANG
S21
MAG
ANG
S12
MAG
ANG
S22
MAG
ANG
Freq.
13500MHz
13600MHz
13750MHz
13800MHz
13900MHz
14000MHz
14100MHz
14200MHz
14300MHz
14400MHz
14500MHz
14600MHz
14700MHz
0.372
0.322
0.264
0.245
0.224
0.211
0.207
0.207
0.209
0.212
0.210
0.214
0.218
-178.1
167.9
145.1
133.9
113.3
91.1
68.7
47.6
28.4
8.7
-10.5
-31.2
-53.4
2.734
2.799
2.830
2.817
2.816
2.819
2.807
2.782
2.747
2.709
2.650
2.589
2.511
-37.5
-48.7
-64.2
-70.8
-81.6
-92.9
-104.5
-116.0
-127.3
-138.8
-150.3
-162.0
-174.2
0.106
0.109
0.110
0.111
0.112
0.113
0.114
0.113
0.112
0.110
0.108
0.105
0.102
-89.4
-99.9
-115.0
-121.0
-131.2
-142.3
-153.0
-164.1
-175.4
174.1
162.7
151.1
140.0
0.134
0.095
0.069
0.074
0.093
0.119
0.145
0.171
0.197
0.217
0.244
0.268
0.298
-179.9
154.0
95.6
70.6
36.4
14.9
-4.7
-19.9
-34.9
-48.9
-63.1
-77.8
-90.3
Edition 1.1
Aug. 2014
3
SGK1314-50A
Ku-Band Internally Matched GaN-HEMT
Amplifier Circuit Outline
SGK1314-50A
C1
C2
C3
C4
C5
C6
C7
C8
R1
R2
R3
0.4pF x 2
1000pF
0.1uF
1000pF
0.4pF x 2
1000pF
1000pF
0.1uF
51ohm
51ohm
51ohm
C1, C5 : ATC600L(size:0603), +/- 0.05pF
C6, C7 : EMI FILTER MARUWA(FTA352AR102S-S)
Substrate : Rogers RO4003C
h=0.542mm, εr=3.38
Cu=18um
Edition 1.1
Aug. 2014
4
SGK1314-50A
Ku-Band Internally Matched GaN-HEMT
Package Out line
Case Style : IBK
Edition 1.1
Aug. 2014
5
Design company listing status
Domestic IC design companies such as Vimicro and Actions Semiconductor are flocking to overseas listings The process of domestic IC (semiconductor) design companies going public overseas is accelerati...
hkn FPGA/CPLD
Standardization will promote the in-depth application of automotive bus technology
With the penetration of electronic and information technology in automobiles, the number of intelligent components with embedded CPUs in automobiles is increasing. Buses that act as bridges for inform...
frozenviolet Automotive Electronics
Solution to CCS8.1.0 not finding .h files
Cause of the problem: (1) The file path does not contain include. Method 1: Include the file or path. step1: Right-click project→properties→build→include option.step2: Click “+” to add the file path →...
Aguilera DSP and ARM Processors
Analysis of the characteristics, advantages and potential applications of 60GHz wireless technology
Wireless connectivity is becoming more and more common. Nowhere is this more evident than in consumer electronics, where the mobile and tablet markets have driven the rapid adoption of a variety of wi...
Aguilera RF/Wirelessly
Looking for the design of station signal simulation control system
If it is a bit difficult, which sensor can determine the occupied track section and how to draw the AD schematic diagram? Thank you very much....
冰淇淋耶 MCU
EEWorld invites you to attend the 2019 STM32 Summit and Fan Carnival!
[align=center][font=微软雅黑][size=3][/size][/font][/align][align=left][font=微软雅黑][size=3] [/size][/font][/align][align=left]IoT technology and innovation are providing important driving force for the dig...
eric_wang stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号