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CBD20120UFCT_T0_10001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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CBD20120UFCT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN

CBD20120UFCT_T0_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionR-PSFM-T3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.72 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage120 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

CBD20120UFCT_T0_10001 Preview

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CBD20120UFCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
120 Volts
CURRENT
20 Amperes
0.100(2.55)
0.112(2.85)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.543(13.8)
0.177(4.5)
0.137(3.5)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
( No te 1 )
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
JC
T
J
T
STG
VALUE
120
85
120
20
10
200
15
-55 to + 150
-55 to + 150
O
UNIT
V
V
V
A
A
C /W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=3A
I
F
=5A
I
F
=10A
I
F
=3A
I
F
=5A
I
F
=10A
V
R
=96V
Reverse current per diode
I
R
V
R
=120V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
MIN.
120
-
-
-
-
-
-
-
-
-
TYP.
-
0.48
0.55
0.67
0.41
0.48
0.57
11
-
18
MAX.
-
-
-
0.72
-
-
-
-
50
-
UNIT
V
V
Instantaneous forward voltage per
diode
V
F
T
J
=125
o
C
V
A
A
mA
January 3,2013-REV.00
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