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BZX84C4V3

Description
Accuracy: - Voltage regulation value (typical value): 4.3V Reverse leakage current: 3uA @ 1V Maximum power: 300mW
CategoryDiscrete semiconductor    diode   
File Size901KB,5 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BZX84C4V3 Overview

Accuracy: - Voltage regulation value (typical value): 4.3V Reverse leakage current: 3uA @ 1V Maximum power: 300mW

BZX84C4V3 Parametric

Parameter NameAttribute value
MakerJCET
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation0.35 W
Nominal reference voltage4.3 V
surface mountYES
Maximum voltage tolerance6.9%
Working test current5 mA
Base Number Matches1

BZX84C4V3 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate D
BZX84C2V4-BZX84C43
ZENER DIODE
SOT-23
FEATURES
Planar Die Construction
300mW Power Dissipation
Zener Voltages from 2.4V -
43V
Ultra-Small Surface Mount Package Power
Dissipation
Maximum Ratings(T
a
=25℃ unless otherwise specified)
Characteristic
Forward Voltage (Note 2)
Power Dissipation(Note 1)
Junction Temperature
Storage Temperature Range
@ I
F
= 10mA
Symbol
V
F
P
d
R
θJA
T
j
T
stg
Value
0.9
300
417
150
-55~+150
Unit
V
mW
/W
Thermal Resistance
from
Junction to Ambient
ZZZFMHOHFFRP
1
D$uJ
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