BZT52C5V1H datasheet, PDF - EEWORLD Datasheet

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BZT52C5V1H: DescriptionAccuracy: - Voltage regulation value (typ.): 5.1V Reverse leakage current: 50uA @ 4.2V Maximum power: 500mW; CategoryDiscrete semiconductor Zener diode; File Size1MB，4 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BZT52C5V1H Overview

Accuracy: - Voltage regulation value (typ.): 5.1V Reverse leakage current: 50uA @ 4.2V Maximum power: 500mW

BZT52C5V1H Parametric

Parameter Name	Attribute value
Accuracy	-
Stable voltage value (typical value)	5.1V
Reverse leakage current	50uA @ 4.2V
Maximum power	500mW

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD- 23 Plastic-Encapsulate Diodes

BZT52C5V1H

FEATURES

Planar Die Construction

General purpose, Medium current

Ideally suited for automated assembly processes

Available in Lead free version

APPLICATION

Mobile Phone

MARKING: H8

ZENER DIODE

SOD- 23

Solid dot = Green molding compound device,if none, the normal device

MAXIMUM RATINGS(Operating temperature range applies unless otherwise specified)

Symbol

ΘJA

stg

Parameter

Power Dissipation(Note 1)

Thermal Resistance from Junction to Ambient

Operating Junction Temperature

Storage Temperature Range

Value

500

250

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS(T

=25

℃

unless otherwise specified)

Parameter

Zener Voltage Range (Note 2)

Maximum Zener Impedance(Note 3)

Symbol

Test conditions

=5mA

=1mA

=2V

=4.2V

= 10mA

Min

5.1

Typ

Max

5.5

450

0.9

Unit

Ω

μA

Maximum Reverse Current (Note 2)

Forward Voltage (Note 2)

Notes:

Device mounted on a 1 in.

ceramic PCB which spread 2 ounces of copper.

2.Short duration test pulse used to minimize self-heating effect.

3. f=1kH

www.cj-elec.com

B,Mar,2016

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