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SK56C R7G

Description
DIODE SCHOTTKY 60V 5A DO214AB
Categorysemiconductor    Discrete semiconductor   
File Size262KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SK56C R7G Overview

DIODE SCHOTTKY 60V 5A DO214AB

SK56C R7G Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)60V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf750mV @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 60V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingDO-214AB,SMC
Supplier device packagingDO-214AB(SMC)
Operating Temperature - Junction-55°C ~ 150°C
SK52C - SK520C
Taiwan Semiconductor
5A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
5
20 - 200
120
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
Configuration
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state
voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
SK
SK
SK
SK
SK
SK
SK
52C 53C 54C 55C 56C 59C 510C
SK
SK
SK
SK
SK
SK
SK
52C 53C 54C 55C 56C 59C 510C
20
30
40
50
60
90
100
14
20
21
30
28
40
35
50
42
60
5
120
10,000
- 55 to +150
- 55 to +150
63
90
70
100
SK
SK
UNIT
515C 520C
SK
SK
515C 520C
150 200
V
105
150
140
200
V
V
A
A
V/μs
°C
°C
1
Version:O1708

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