BZT52C3V6S datasheet, PDF - EEWORLD Datasheet

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BZT52C3V6S: DescriptionZener diode; CategoryDiscrete semiconductor; File Size550KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BZT52C3V6S Overview

Zener diode

Features

Product Name: Zener Diode

Product model: BZT52C3V6S

product features:

Planar die construction

200mW power dissipation on ceramic PBC

General purpose, Medium current

Ideally suited for automated assembly processes

Available in Lead free version

Product parameters:

Pd power dissipation: 200mW

Vz stable voltage: Nom=3.6V Min=3.4V Max=3.8V

Zzt breakdown impedance: 90Ω

Zzk breakdown impedance: 600Ω

IR reverse current: 5uA

Vf forward voltage drop: 0.9V

Package: SOD-323

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-323 Plastic-Encapsulate Diodes

BZT52C2V4S-BZT52C39S

ZENER DIODE

FEATURES：

Planar die construction

200mW power dissipation on ceramic PBC

General purpose, Medium current

Ideally suited for automated assembly processes

Available in Lead free version

SOD-323

Maximum Ratings

=25℃ unless otherwise specified

)

Characteristic

Forward Voltage (Note 2) @ I

= 10mA

Power Dissipation(Note 1)

Thermal Resistance, Junction to Ambient Air

Operating and Storage Temperature Range

Symbol

θJA

STG

Value

0.9

200

625

-65

+150

Unit

℃/W

℃

Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm

2. Short duration test pulse used to minimize self-heating effect.

3. f = 1kHz.

A,Jun,2011

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