BZT52B4V3 datasheet, PDF - EEWORLD Datasheet

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BZT52B4V3: DescriptionZener diode; CategoryDiscrete semiconductor; File Size5MB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BZT52B4V3 Overview

Zener diode

Features

Product Name: Zener Diode

Product model: BZT52B4V3

product features:

Planar Die Construction

500mW Power Dissipation on Ceramic PCB

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Available in Lead Free Version

Product parameters:

Pd dissipated power: 350mW

Vz stable voltage: Nom=4.3V Min=4.21V Max=4.39V

Zzt breakdown impedance: 90Ω

Zzk breakdown impedance: 600Ω

IR reverse current: 3uA

Vf forward voltage drop: 0.9V

Package: SOD-123

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diodes

BZT52B2V4-BZT52B43

FEATURES：

Planar Die Construction

500mW

Power Dissipation on Ceramic PCB

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Available in Lead Free Version

ZENER DIODE

SOD-123

Maximum Ratings(T

=25

℃

unless otherwise specified)

Characteristic

Forward Voltage (Note 2)

Power Dissipation(Note 1)

Thermal Resistance, Junction to Ambient Air

Operating and Storage Temperature Range

@ IF = 10mA

Symbol

θJA

STG

Value

0.9

350

357

-65

+150

Unit

℃

Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm

2. Short duration test pulse used to minimize self-heating effect.

3. f = 1kHz.

B,Jan,2012

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