BZT52-B3V9S_R1_00001 datasheet, PDF

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BZT52-B3V9S_R1_00001: DescriptionAccuracy: - Voltage regulation value (typ.): 3.9V Reverse leakage current: 10uA @ 1V Maximum power: 200mW 3.9V 200mW; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZT52-B3V9S_R1_00001 Overview

Accuracy: - Voltage regulation value (typ.): 3.9V Reverse leakage current: 10uA @ 1V Maximum power: 200mW 3.9V 200mW

BZT52-B3V9S_R1_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	GREEN, PLASTIC PACKAGE-2
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	95 Ω
JESD-30 code	R-PDSO-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.2 W
Nominal reference voltage	3.9 V
surface mount	YES
technology	ZENER
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	2.05%
Working test current	5 mA
Base Number Matches	1

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BZT52-B2V4S SERIES

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE

2.4 to 75 Volt

POWER

200 mWatt

FEATURES

• Planar Die construction

• 200mW Power Dissipation

• Zener Voltages from 2.4~75V

• Ideally Suited for Automated Assembly Processes

• Lead free in compliance with EU RoHS 2.0

• Green molding compound as per IEC 61249 standard

0.054(1.35)

0.045(1.15)

0.078(1.95)

0.068(1.75)

0.014(0.35)

0.009(0.25)

0.036(0.90)

0.027(0.70)

MECHANICAL DATA

• Case: SOD-323, Molded Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Apporx. Weight: 0.00014 ounces, 0.0041 grams

0.006(0.15)

0.002(0.05)

0.107(2.7)

0.090(2.3)

0.012(0.30)MIN.

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation @T

=25

C(Note A)

Typical Thermal Resistance(Note B)

Operating Junction and Storage Temperature Range

Symbol

θJA

Value

200

650

-55 to +150

Units

C/W

NOTES:

A. Mounted on a FR-4 PCB, single-sided copper, with 100cm

copper pad area.

B. Mounted on a FR-4 PCB, single-sided copper, mini pad.

May 15,2018-REV.08

PAGE . 1

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