BZT52-B14S_R1_00001 datasheet, PDF

BZT52-B14S_R1_00001: DescriptionMaximum power: 200mW Accuracy: - Reverse leakage current: 0.1uA @ 10.5V Voltage regulation value (typical value): 14V 14V 200mW; CategoryDiscrete semiconductor diode; File Size290KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Maximum power: 200mW Accuracy: - Reverse leakage current: 0.1uA @ 10.5V Voltage regulation value (typical value): 14V 14V 200mW

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-F2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	25 Ω
JESD-30 code	R-PDSO-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.2 W
Nominal reference voltage	14 V
surface mount	YES
technology	ZENER
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	2%
Working test current	5 mA
Base Number Matches	1

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