BZM55-A10T/R datasheet, PDF - EEWORLD Datasheet

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BZM55-A10T/R: DescriptionZener Diode, 10V V(Z), 1%, 0.5W; CategoryDiscrete semiconductor diode; File Size70KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZM55-A10T/R Overview

Zener Diode, 10V V(Z), 1%, 0.5W

BZM55-A10T/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	15 Ω
Number of components	1
Maximum operating temperature	175 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5 W
Nominal reference voltage	10 V
surface mount	YES
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	1%
Base Number Matches	1

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DATA SHEET

BZM55-C2V4 SERIES

SURFACE MOUNT ZENER DIODES

VOLTAGE

2.4 to 47 Volts

POWER

500 mWatts

MICRO-MELF

Unit : inch (mm)

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

.049(1.25)

.047(1.2)DIA.

MECHANICAL DATA

• Case: Molded Glass MICRO-MELF

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: See Diagram Below

• Approx. Weight: 0.01 grams

• Mounting Position: Any

• Packing information

T/R - 2.5K per 7" plastic Reel

.043(1.1)

.008(0.2)

.079(2.0)

.071(1.8)

.008(0.2)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25

Junction Temperature

Storage Temperature Range

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Symbol

Value

500

175

-65 to +175

Units

TOT

Parameter

Thermal Resi stance Juncti on to Ambi ent Ai r

Forward Voltage at IF = 100mA

Symbol

Min.

Typ.

Max.

0.3

Uni ts

K/mW

RthA

Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.

STAD-JAN.27.2004

PAGE . 1

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