EEWORLDEEWORLDEEWORLD

Part Number

Search

BSS138_R1_00001

Description
Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 300mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 3Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 350mW Type: N-channel N-channel 50V 0.3A
CategoryDiscrete semiconductor    The transistor   
File Size235KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BSS138_R1_00001 Overview

Drain-source voltage (Vdss): 50V Continuous drain current (Id) (at 25°C): 300mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 3Ω @ 500mA, 10V Maximum power dissipation (Ta =25°C): 350mW Type: N-channel N-channel 50V 0.3A

BSS138_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionGREEN, PLASTIC PACKAGE-3
Reach Compliance Codecompliant
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSS138_R1_00001 Preview

Download Datasheet
BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@2.5V,I
DS
@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.056(1.40)
0.047(1.20)
0.008(0.20)
0.003(0.08)
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals: Solderable per MIL-ST
D-750,Method 2026
• Apporx. Weight: 0.0003 ounce, 0.0084 gram
• Marking: 138
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e V o lta g e
Ga te - S o ur c e V o lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
50
+20
300
2000
350
210
- 5 5 to + 1 5 0
357
Uni ts
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
M a xi m um P o we r D i s s i p a ti o n
T
A
= 7 5
O
C
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Ra ng e
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
March 25,2017-REV.02
PAGE . 1
EEWORLD University ---- FPGA-based SOPC development process (Intel official tutorial)
FPGA-based SOPC development process (Intel official tutorial) : https://training.eeworld.com.cn/course/5559Explain the complete SOPC development process and understand the basic concepts of SOPC and I...
Lemontree FPGA/CPLD
Comparison of 5G and Wi-Fi 6 air interface technologies
In the past six months, there has been an endless stream of news about 5G networks. 5G commercial licenses have been officially issued, and the three major operators have stated that they will cover a...
btty038 RF/Wirelessly
[Qinheng Trial] First experience with the second board_capacitive touch
[i=s]This post was last edited by a newbie on 2019-6-18 17:03[/i]I downloaded the information and took a look at it. It is relatively simple to operate. There are some routines for reference. It would...
一个小白 DIY/Open Source Hardware
EEWORLD University----TI-RSLK Module 19 - Low Energy Bluetooth
TI-RSLK Module 19 - Bluetooth Low Energy : https://training.eeworld.com.cn/course/4678...
hi5 Talking
Use of Inductor
[i=s] This post was last posted by qwqwqw2088 on 2019-2-25 09:59 Edit[/i] [size=4][color=#000000][backcolor=white]1. Definition of Inductor[/backcolor][/color][/size] [size=4][color=#000000][backcolor...
qwqwqw2088 Analogue and Mixed Signal
TN type liquid crystal display principle
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 20:00[/i] TN-type liquid crystal display principle TN-type liquid crystal display technology can be said to be the most basic among liquid...
gaoyanmei Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号