BSS138W_R2_00001 datasheet, PDF

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BSS138W_R2_00001: DescriptionSmall Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BSS138W_R2_00001 Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS138W_R2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
Other features	ULTRA LOW RESISTANCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

BSS138W_R2_00001 Preview

BSS138W

50V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R

DS(ON)

, V

@10V,I

@500mA=3Ω

• R

DS(ON)

, V

@4.5V,I

@200mA=4Ω

• R

DS(ON)

, V

@2.5V,I

@100mA=6Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected

•

0.054(1.35)

0.045(1.15)

0.056(1.40)

0.047(1.20)

0.006(0.15)

0.002(0.05)

0.087(2.20)

0.070(1.80)

SOT-323

Unit

：

inch(mm)

0.004(0.10)MIN.

0.044(1.10)

0.035(0.90)

MECHANICAL DATA

• Case: SOT-323 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : 38W

• Apporx. Weight: 0.000 ounce , 0.005 gram

0.004(0.10)MAX.

0.016(0.40)

0.008(0.20)

Maximum Ratings and Thermal Characteristics (T

=25

C unless otherwise noted )

PA RA M E TE R

D r a i n- S o ur c e Vo lta g e

Ga te - S o ur c e Vo lta g e

C o nti nuo us D r a i n C ur r e nt

P uls e d D r a i n C ur r e nt

S ym b o l

D M

S TG

θJ

L i mi t

+20

300

2000

350

210

- 5 5 to + 1 5 0

357

Uni ts

= 2 5

= 7 5

Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e

Ra ng e

M a xi m um P o we r D i s s i p a ti o n

Junction-to Ambient Thermal Resistance(PCB mounted)

C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

November 09,2010-REV.01

0.087(2.20)

0.078(2.00)

PAGE . 1

BSS138W

ELECTRICALCHARACTERISTICS

P a r a m e te r

S ta ti c

D ra i n-S o urc e B re a k d o wn

Vo lta g e

G a te Thr e s ho ld Vo lta g e

D ra i n-S o urc e On-S ta te

Re s i s ta nc e

D ra i n-S o urc e On-S ta te

Re s i s ta nc e

D ra i n-S o urc e On-S ta te

Re s i s ta nc e

Ze r o Ga te Vo lta g e D ra i n

C ur re nt

Gate Body Leakage

Forward Transconductance

Dynamic

To ta l Ga te C ha r g e

Tur n- On Ti m e

Tur n- Off Ti m e

Inp ut C a p a c i ta nc e

O utp ut C a p a c i ta nc e

Re ve r s e Tra ns fe r

C a p a c i ta nc e

S o urc e - D r a i n D i o d e

D i o d e F o rwa r d Vo lta g e

C o nti nuo us D i o d e F o r wa r d

C ur re nt

P uls e D i o d e F o rwa r d

C ur re nt

S M

=250mA , V

=0V

0.82

1.2

300

2000

o ff

i ss

oss

rss

D S

=2 5 V , V

=0 V

f=1 .0 M H

D S

=2 5 V, I

=2 5 0 m A

=4.5V

=30V , R

=100Ω

=300mA , V

GEN

=10V

=6Ω

1 .0

150

B V

DSS

GS ( th)

D S ( o n)

D S S

GS S

=0 V , I

=1 0 uA

D S

, I

=2 5 0 uA

=2.5V , I

=100mA

=4.5V , I

=200mA

=10V , I

=500mA

=50V , V

=0V

=+ 2 0 V , V

D S

=0 V

D S

=1 0 V , I

=2 5 0 m A

0 .8

100

2 .8

1 .8

1.6

1 .5

6 .0

4 .0

3.0

+1 0

S ym b o l

Te s t C o nd i ti o n

M i n.

Typ .

M a x.

Uni ts

Switching

Test Circuit

OUT

Gate Charge

Test Circuit

1mA

November 09,2010-REV.01

PAGE . 2

BSS138W

Typical Characteristics Curves (T

=25 C,unless otherwise noted)

-Drain-to-Source Current (A)

1.2

1.0

0.8

-Drain-to-Source Current (A)

=10V~4.0V

=10V

0.8

0.6

0.4

0.2

3.0V

0.6

0.4

0.2

= 25 C

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Fig. 1-TYPICAL FORWARD CHARACTERISTIC

FIG.1- Output Characteristic

FIG.2- Transfer Characteristic

DS(ON)

- On Resistance (

)

DS(ON)

- On Resistance (

)

=4.5V

=10V

=200mA

=500mA

0.2

0.4

0.6

0.8

1.2

- Drain Current (A)

- Gate-to-Source Voltage (V)

FIG.3- On Resistance vs Drain Current

1.8

1.6

1.4

1.2

0.8

0.6

-50

-25

100 125 150

FIG.4- On Resistance vs Gate to Source Voltage

DS(ON)

-On-Resistance(Normalized)

=10 V

=500mA

- Junction Temperature (

FIG.5- On Resistance vs Junction Temperature

November 09,2010-REV.01

PAGE . 3

BSS138W

- Gate-to-Source Voltage(V)

=250m

= 0V

- Source Current (A)

= 125 C

=25 C

0.1

=-55 C

0.01

0.2

0.4

0.6

0.8

1.2

0.2

0.4

0.6

0.8

1.2

1.4

- Source-to-Drain Voltage (V)

- Gate Charge (nC)

Fig.6 - Gate Charge Waveform

- G-S Threshold Voltage(Normalized)

DSS

- Breakdown Voltage(Normlized)

1.2

= 250

1.1

1.0

0.9

0.8

0.7

-50

Fig.7 Source-Drain Diode Forward Voltage

1.2

1.15

1.1

1.05

0.95

0.9

= 250

-25

100 125 150

-50

-25

100 125 150

- Junction Temperature ( C)

- Junction Temperature (

Fig.8 - Threshold Voltage vs Temperature

Fig.9 - Breakdown Voltage vs Junction Temperature

f = 1MHz

= 0V

C - Capacitance (pF)

Ciss

Coss

Crss

- Drain-to-Source Voltage (V)

Fig.10 - Capacitance vs Drain to Source Voltage

November 09,2010-REV.01

PAGE . 4

BSS138W

MOUNTING PAD LAYOUT

SOT-323

0.026

(0.66)

Unit

：

inch(mm)

0.034

(0.86)

0.026

(0.65)

0.026

(0.65)

ORDER INFORMATION

• Packing information

T/R - 12K per 13" plastic Reel

T/R - 3K per 7” plastic Reel

November 09,2010-REV.01

0.073

(1.85)

PAGE . 5

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