BRMJE172D
Rev.D Dec.-2015
DATA SHEET
描述
/
Descriptions
TO-252 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a TO-252 Plastic Package.
特征
/ Features
开关速度快.
high speed switching.
用途
/
Applications
用于音频功率放大，小电流高速开关。
Low power audio amplifier, Low current, high speed switching applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1：Base
放大及印章代码
PIN 2,4：Collector
PIN 3：Emitter
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions
.
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BRMJE172D
Rev.D Dec.-2015
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
(Tc=25
℃
)
T
j
T
stg
数值
Rating
-100
-80
-7.0
-3.0
-6.0
-1.0
1.5
12.5
150
-55½150
单½
Unit
V
V
V
A
A
A
W
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)(1)
测试条件
Test Conditions
I
C
=-10mA
V
CB
=-100V
V
EB
=-7.0V
V
CE
=-1.0V
V
CE
=-1.0V
V
CE
=-1.0V
I
C
=-500mA
I
C
=-1.5A
I
C
=-3.0A
I
C
=-1.5A
I
C
=-3.0A
V
CE
=-1.0V
V
CE
=-10V
V
CB
=-10V
I
B
=0
I
E
=0
I
C
=0
I
C
=-100mA
I
C
=-500mA
I
C
=-1.5A
I
B
=-50mA
I
B
=-150mA
I
B
=-600mA
I
B
=-150mA
I
B
=-600mA
I
C
=-500mA
I
C
=-100mA
f=0.1MHz
50
50
50
30
12
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
V
V
V
V
V
V
MHz
pF
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-80
-0.1
-0.1
300
V
μA
μA
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
V
CE(sat)(2)
V
CE(sat)(3)
V
BE(sat)(1)
V
BE(sat)(2)
V
BE(on)
f
T
C
ob
Base to Emitter Saturation Voltage
Base to Emitter On Voltage
Transition Frequency
Reverse Transfer Capacitance
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