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BD10150CS

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size122KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BD10150CS Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: BD10150CS


parameter:


Repetitive reverse voltage peak Vrrm: 150V


Maximum average rectified current Io: 10A


Maximum forward surge current I FSM: 100A


Forward voltage drop VF: 0.9V when IF=5A


Maximum feedback current IR: 50uA when VR=150V


Package: TO-252/DPAK


BD10150CS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-252
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts4
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

BD10150CS Preview

Download Datasheet
BD1040CS~BD10200CS
SCHOTTKY BARRIER RECTIFIERS
CURRENT
VOLTAGE
40 to 200 Volts
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For through hole applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
Lead free in comply with EU RoHS 2002/95/EC directives
10.0 Amperes
MECHANICALDATA
• Case: TO-252 molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Weight: 0.0104 ounces, 0.297 grams.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A p e r l e g
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S T G
BD1040CS BD1045CS BD1050CS BD1060CS BD1080CS BD1090CS BD10100CS BD10150CS BD10200CS
U N IT S
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
10
100
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 5
0 .0 5
20
3 .0
0 .8 0
0 .9 0
V
mA
O
C /
W
C
-5 5 to +1 5 0
-65 to +175
O
NOTES:
Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
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