BC817_11 datasheet, PDF - EEWORLD Datasheet

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BC817_11: Description500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size78KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC817_11 Overview

500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

500 mA, 45 V, NPN, 硅, 小信号晶体管

BC817_11 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	GREEN, PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Maximum ambient power consumption	0.3000 W
Transistor type	Universal small signal
Minimum DC amplification factor	160
Rated crossover frequency	100 MHz

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BC817 SERIES

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE

FEATURES

• General purpose amplifier applications

• NPN epitaxial silicon, planar design

• Collector current I

= 500mA

• In compliance with EU RoHS 2002/95/EC directives

0.120(3.04)

0.110(2.80)

45 Volts

POWER

330 mWatts

0.006(0.15)MIN.

0.008(0.20)

0.003(0.08)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0003 ounce, 0.0084 gram

• Device Marking : BC817-16 : 8A

BC817-25 : 8B

BC817-40 : 8C

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.070(1.80)

0.004(0.10)MAX.

MECHANICAL DATA

PARAMETER

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Max Power Dissipation (Note 1)

Junction and Storage Temperature Range

SYMBOL

CEO

CBO

EBO

TOT

, T

STG

Value

5.0

500

330

-55 to +150

UNIT

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance , Junction to Ambient

SYMBOL

θJA

Value

556

UNIT

C/W

Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in

January 05,2011-REV.01

PAGE . 1

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