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BAW56LT1

Description
Rectifier Diode, 0.2A, 70V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size35KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAW56LT1 Overview

Rectifier Diode, 0.2A, 70V V(RRM)

BAW56LT1 Parametric

Parameter NameAttribute value
MakerJCET
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
Maximum operating temperature150 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES

BAW56LT1 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAW56LT1
FEATURES
Power dissipation
P
D:
225
mW (Tamb=25℃)
1. 0
SWITCHING DIODE
SOT-23
Forward Current
200 m A
I
F:
Reverse Voltage
70
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
M ki ng A1
ar
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
unless otherwise specified)
Test
conditions
MIN
70
2.5
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=70V
0. 4
µ
A
I
F
=1mA
Forward
voltage
V
F
I
F
=10mA
I
F
=50mA
I
F
=150mA
Diode
capacitance
C
D
t
rr
715
855
1000
1250
2
6
mV
V
R
=0V, f=1MHz
pF
nS
Reverse recovery time
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