BAV70 datasheet, PDF - EEWORLD Datasheet

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BAV70: DescriptionReverse recovery time: 4ns Reverse withstand voltage VR: 100V Average rectified current IF: 200mA Forward voltage drop VF: 1.25V@150mA; CategoryDiscrete semiconductor Switching diode; File Size331KB，2 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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BAV70 Overview

Reverse recovery time: 4ns Reverse withstand voltage VR: 100V Average rectified current IF: 200mA Forward voltage drop VF: 1.25V@150mA

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BAV70

Silicon Epitaxial Planar Switching Diode

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Applications

• Ultra high speed switching application

Marking Code:

SOT-23 Plastic Package

Absolute Maximum Ratings (T

= 25

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Average Forward Current

Maximum Peak Forward Current

Non-Repetitive Peak Forward Surge Current

Power Dissipation

Junction Temperature

Storage Temperature Range

at t = 1 s

at t = 1 µs

Symbol

FSM

stg

Value

100

200

300

350

150

- 55 to + 150

Unit

Characteristics at T

= 25

Parameter

Forward Voltage

at I

= 1 mA

at I

= 10 mA

at I

= 50 mA

at I

= 150 mA

Reverse Current

at V

= 20 V

at V

= 75 V

at V

= 25 V, T

= 150

at V

= 75 V, T

= 150

Reverse Breakdown Voltage

at I

= 100 µA

Total Capacitance

at V

= 0 , f = 1 MHz

Reverse Recovery Time

at I

= I

= 10 mA to I

= 1 mA, R

= 50

Ω

Symbol

(BR)R

Min.

Max.

715

855

1.25

2.5

Unit

µA

www.slkormicro.com

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